In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defined by a processing chamber, and a wafer chuck structure arranged within the processing chamber. The wafer chuck structure is configured to hold a wafer during a fabrication process. The wafer chuck includes a lower portion and an upper portion arranged over the lower portion. The lower portion includes trenches extending from a topmost surface towards a bottommost surface of the lower portion. The upper portion includes openings that are holes, extend completely through the upper portion, and directly overlie the trenches of the lower portion. Multiple of the openings directly overlie each trench. Further, cooling gas piping is coupled to the trenches of the lower portion of the wafer chuck structure, and a cooling gas source is coupled to the cooling gas piping.

A steel sheet is provided with a coating having at least one layer of zinc and a top layer of paint applied by cataphoresis. The zinc layer is deposited by a jet vapor deposition process in a deposition chamber maintained at a pressure between 6.Math.10.sup.−2 mbar and 2.Math.10.sup.−1 mbar. A fabrication method and an installation are also provided.

EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

A system and method are provided for implementing a unique scheme by which to execute digital vapor phase patterning on metals, semiconductor substrates and other surfaces using a proposed variable data digital lithographic image forming architecture or technique. For certain substrate printing and manufacturing applications, including some printed electronics applications, the disclosed schemes implement techniques to digitally pattern metal layers with bulk material properties in a manner that is aligned with underlying layers on the fly. The disclosed digital printing process may pattern a release oil on a substrate in support of a metal deposition process. Changeable patterning is implemented with an ability to modify the alignment of the patterns on-the-fly. The release layer on a drum is laser patterned in order that the patterned release layer is transferred to the substrate, or the patterning of the release layer is accomplished directly on the substrate.

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

An unchamfered piston ring that is pre-treated by grit blasting to a defined roughness, followed by PVD coating with a metal nitride to a thickness of at least 10 μm, leaving peaks and valleys in the coated piston ring. The coated piston ring is then lapped to remove the peaks without penetrating the coating, so that valleys and plateaus remain in the coated surface. The resulting piston ring exhibits superior coating retention due to the increased surface area created by the grit blasting, and yet also superior performance, as the cavities remaining increase the porosity of the coating and thus enhance the lubrication of the ring.

A boron doped diamond electrode and its preparation method and application, the electrode is deposited with a boron or nitrogen doped diamond layer or a boron or nitrogen doped diamond layer composite layer on the surface of the electrode substrate, or after a transition layer is disposed on the surface of the substrate, a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer is disposed on the surface of transition layer. The preparation method is depositing or plating a boron or nitrogen doped diamond layer on the surface of the electrode substrate, or providing a transition layer on the surface of the electrode substrate, and then depositing or plating a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer on the surface of the transition layer.

The invention relates to a method for producing a semi-transparent motor vehicle design element (3), comprising the following steps:

A providing a dimensionally stable, at least partially light-permeable substrate (1) which is heat-resistant for a temperature of at least 60° C., the substrate (1) having a front side (1a) and a rear side (1b),

B introducing the substrate (1) into a vacuum chamber (2) and applying a first metallic semi-transparent layer (L1) by means of a PVD process to the substrate (1) according to step a) which is situated in the vacuum chamber (2), and

C applying a light-impermeable cover layer (LD) to the front or rear side (1a, 1b) of the substrate (1), the light-impermeable cover layer (LD) containing at least one light-permeable opening (8) for reproducing at least one graphical symbol (SYM),

steps B and C being carried out such that light (LSQ) passing through the at least one opening (8) in the light-impermeable cover layer (LD) from the rear side (1b) towards the front side (1a) of the substrate (1) is incident on the first metallic semi-transparent layer (L1) and at least partially passes outwards through the first metallic semi-transparent layer (L1) in order to project the at least one graphical symbol (SYM) represented by the at least one opening (8).

The transparent conductive layer (3) includes a first main surface (5), and a second main surface (6) opposed to the first main surface (5) in a thickness direction. The transparent conductive layer (3) has a first grain boundary (7) in which two end edges (23) in a cross-sectional view are both opened to the first main surface (5) and an intermediate region (25) between the end edges (23) is not in contact with the second main surface (6); and a first crystal grain (31) partitioned by the first grain boundary (7) and facing only the first main surface (5). The transparent conductive layer (3) contains rare gas atoms having a higher atomic number than argon atoms.