The present invention provides a method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, in which A represents an organic cation or a mixture of two or more different cations, at least one of which is an organic cation, M represents a divalent metal cation or a mixture of two or more different divalent metal cations, and X represents halide anions which are the same or different, the method comprising the steps of: (i) forming a first layer on the surface of a substrate, the first layer comprising an organic-inorganic metal halide perovskite material having a planar, layered two-dimensional crystal structure (ii) reacting the first layer with one or more organic halides to form the crystalline or polycrystalline layer comprising an organic-inorganic metal halide perovskite material having the formula AMX.sub.3. Also provided is an optoelectronic or photovoltaic device including an active layer comprising an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, wherein the material is obtainable using the above defined method.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

The present disclosure relates to a method for manufacturing a film for a decoration element, the method including depositing two or more islands on one surface of a film; and forming a pattern portion by dry etching the film using the island as a mask.

The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

The present invention relates to a superconductive rare-earth metal oxyhydride material and a method for producing the material. The method comprising the steps of: —first the formation on a substrate of a layer of an oxygen free rare-earth metal hydride with a predetermined thickness using a physical vapor deposition process; and —second exposing the rare-earth metal hydride layer to oxidative agent for oxidation where the oxygen reacts with the rare-earth metal hydride that results with obtaining rare-earth metal oxyhydride, the oxidation being below a predetermined limit defined by a measured transparency being less than 10%.

Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.

A method for colouring a part to be treated made of metal, this method including the step of implanting mono- or multi-charged ions in a surface layer of the part to be treated by directing towards this part to be treated a mono- or multi-charged ion beam produced by a source of mono- or multi-charged ions, the part to be treated changing colour under the effect of this ion implantation. A coloured metal can be obtained with the above method.

An adjustable deforming composite structure based on a hydrogen-induced expansion effect and a preparation method therefor are provided. The hydrogen-induced expansion effect means metals absorb hydrogen under a hydrogen-containing atmosphere and at a temperature to produce a volume expansion effect. Reactions between the metals and hydrogen are reversible reactions. When a hydrogen partial pressure is reduced or the temperature is increased, the hydrogen in the metals is removed, and the metals are restored to an original shape. Under a stimulation of external hydrogen and heat, a composite of a hydrogen-absorbing metal and other non-hydrogen-absorbing materials undergo an adjustable deformation according to a design, and a material undergoes reversible shape changes. The preparation method is applied to composite materials for a 4D printing and is used for an intelligent shape adjustment at a medium to high temperature.