A thin aluminum film substrate and microarrays thereof including a substrate and a thin film of aluminum deposited on the substrate for surface plasmon resonance analysis. Methods of forming the thin aluminum film substrate and microarrays including providing a substrate, using electron-beam physical vapor deposition (EBPVD) to deposit a thin film of Al on a surface of the substrate. Also disclosed are methods of detecting an analyte, wherein a functionalized surface of the thin aluminum film includes a biomolecule and the methods include applying a sample including the analyte to the thin aluminum film substrate, and using surface plasmon resonance (SPR) spectroscopy to detect molecular interactions between the biomolecule and the analyte at a surface of the thin aluminum film substrate. In some examples, an unmodified Al film with an Al.sub.2O.sub.3 layer is effective in enriching phosphorylated peptides. In some examples, a coating of an ionic polymer is used to analyze charged-based interactions of biomolecules.

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer, which are in direct contact with one another. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In addition to the improved electrochromic devices and methods for fabrication, integrated deposition systems for forming such improved devices are also disclosed.

A steel sheet is provided with a coating having at least one layer of zinc and a top layer of paint applied by cataphoresis. The zinc layer is deposited by a jet vapor deposition process in a deposition chamber maintained at a pressure between 6.Math.10.sup.−2 mbar and 2.Math.10.sup.−1 mbar. A fabrication method and an installation are also provided.

A thin film getter is provided. The thin film getter comprises a substrate and an absorption layer on the substrate, wherein the absorption layer comprises a getter material for absorbing target gas and an auxiliary material for providing a moving path of the target gas, and the getter material can be divided into a plurality of getter regions by the auxiliary material.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition. In certain embodiments, the device includes a counter electrode having an anodically coloring electrochromic material in combination with an additive.

A titanium aluminide (TiAl) coating capable of improving high-temperature oxidation resistance of titanium alloys and a preparation method thereof are provided. The TiAl coating includes α-AlF.sub.3 nanoparticles, and a content of the α-AlF.sub.3 nanoparticles is 5-30 vol. % of the TiAl coating. The preparation method of the TiAl coating includes: using a TiAl alloy target and an α-AlF.sub.3 target as raw materials, and performing magnetron sputtering on a substrate surface to prepare a coating; the magnetron sputtering is double-target co-sputtering, and a substrate temperature during the magnetron sputtering is 150° C., the TiAl alloy target is performed direct current sputtering with a power of 0.5-2 kW, and the α-AlF.sub.3 target is performed radio frequency sputtering with a power of 0.07-0.2 kW. After the coating is obtained by the double-target co-sputtering, the obtained coating is heat-treated at 600-800° C. for 5-20 h to obtain a final coating.

Provided is an optical filter capable of reducing the dependency on the angle of light incidence. An optical filter 1 includes a hydrogenated silicon-containing film 4, wherein in a Raman spectrum of the hydrogenated silicon-containing film 4 measured by Raman spectroscopy a ratio (SiH/SiH.sub.2) obtained from a ratio between an area of a peak derived from SiH and an area of a peak derived from SiH.sub.2 is 0.7 or more.

A decorative component includes a plurality of metal finish layers deposited over a substrate and a plurality of sub-layers. The outermost metal finish layer is selectively deposited or removed to define one or more recesses to create different appearances of the component. The outer metal layer may undergo laser ablation to remove at least a portion of the outer layer while still exposing the outer layer in the area of removed material. The recess may extend fully through the outer layer to expose the underlying metal finish layer, and/or the recess may have a sloped bottom surface to define a gradient appearance. The outer layer may be applied over a mask that is applied to the underlying layer, such that the outer layer is selectively applied. The outer layer may be removed to expose the underlying finish layer without exposing a nickel sublayer and without requiring a top coat.

Analyte sensors and methods for fabricating analyte sensors are provided. In an exemplary embodiment, a method for fabricating a planar flexible analyte sensor includes sputtering platinum onto a polyester base layer to form a layer of platinum. The method includes patterning the layer of platinum to form working electrodes and additional electrodes. Further, the method includes forming an insulating dielectric layer over the base layer, wherein the insulating dielectric layer is formed with openings exposing portions of the working electrodes and portions of the additional electrodes. Also, the method includes partially singulating individual sensors from the base layer, wherein each individual sensor is connected to the base layer by a tab. The method further includes depositing an enzyme layer over the exposed portions of the working electrodes and coating the working electrodes with a glucose limiting membrane.

The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO.sub.4 substrate, comprising following steps: (1) providing a ScAlMgO.sub.4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO.sub.4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO.sub.4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.