A process for large-scale production of graphene comprising a step of applying graphene onto a movable surface carrying multiple particles using a PECVD-based process operating at low temperatures enabling the coating of materials that are at risk of melting, decomposing or deforming at higher temperatures. The graphene can be separated from said particles, and the particles re-circulated in the process. A production unit designed for continuous or semi-continuous large-scale production of graphene and graphene-coated particles, where said graphene-coated particles are either the desired end-product, or an intermediate. Graphene-coated particles, in particular particles where the graphene forms flakes having a desired orientation in relation to a surface of said particles.

A process for large-scale production of graphene comprising a step of applying graphene onto a movable surface carrying multiple particles using a PECVD-based process operating at low temperatures enabling the coating of materials that are at risk of melting, decomposing or deforming at higher temperatures. The graphene can be separated from said particles, and the particles re-circulated in the process. A production unit designed for continuous or semi-continuous large-scale production of graphene and graphene-coated particles, where said graphene-coated particles are either the desired end-product, or an intermediate. Graphene-coated particles, in particular particles where the graphene forms flakes having a desired orientation in relation to a surface of said particles.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A corrugated shadow mask for patterned vapor deposition includes a corrugated membrane under tensile stress with a plurality of through-apertures forming an aperture array through which a vaporized deposition material can pass. The through-apertures are at the apexes of the corrugation and project from the membrane surface surrounding the through-apertures. The shadow mask is particularly suited for forming pixel arrays for OLED displays without color mixing from adjacent pixels.

A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).

Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Ωcm and, when the peak strength in a wave number range of 760-780 cm.sup.−1 in a Raman spectrum is regarded as “A” and the peak strength in a wave number range of 790-800 cm.sup.−1 in the Raman spectrum is regarded as “B”, then the peak ratio (A/B) is not more than 0.100.

A layer system includes barrier properties against oxygen and water vapor. There may be an alternating layer system of at least two aluminum oxide layers and at least two titanium oxide layers. The aluminum oxide layers and the titanium oxide layers are deposited alternately on top of one another. The aluminum oxide layers and the titanium oxide layers are deposited by ALD layer deposition with a layer thickness of 5 nm to 20 nm. A first Parylene layer is deposited with a layer thickness of 0.1 μm to 50 μm on a first side of the alternating layer system by CVD.

The present invention includes: transferring a C-plane sapphire thin film 1t having an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate 11 and covering the surface of the C-plane sapphire thin film 1t with a surface treatment layer 11a made of AlN; having GaN grow epitaxially on the surface treatment layer 11a; ion-implanting a GaN film 13; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate 12; performing peeling at an ion implantation region 13.sub.ion in the GaN film 13 and transferring a GaN thin film 13a onto the support substrate 12; and obtaining a GaN laminate substrate 10.

A boron doped diamond electrode and its preparation method and application, the electrode is deposited with a boron or nitrogen doped diamond layer or a boron or nitrogen doped diamond layer composite layer on the surface of the electrode substrate, or after a transition layer is disposed on the surface of the substrate, a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer is disposed on the surface of transition layer. The preparation method is depositing or plating a boron or nitrogen doped diamond layer on the surface of the electrode substrate, or providing a transition layer on the surface of the electrode substrate, and then depositing or plating a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer on the surface of the transition layer.