Provided is a method for manufacturing a semiconductor silicon wafer capable of inhibiting P-aggregation defects (Si-P defects) and SF in an epitaxial layer. The method includes a step of forming a silicon oxide film with a thickness of at least 300 nm or thicker only on the backside of the silicon wafer substrate by the CVD method at a temperature of 500° C. or lower after the step of forming the silicon oxide film, a step of heat treatment where the substrate is kept in an oxidizing atmosphere at a constant temperature of 1100° C. or higher and 1250° C. or lower for 30 minutes or longer and 120 minutes or shorter after the heat treatment, a step of removing surface oxide film formed on the front surface of the substrate, and a step of depositing a silicon monocrystalline epitaxial layer on the substrate after the step of removing the surface oxide film.

Provided is a method for manufacturing a semiconductor silicon wafer capable of inhibiting P-aggregation defects (Si-P defects) and SF in an epitaxial layer. The method includes a step of forming a silicon oxide film with a thickness of at least 300 nm or thicker only on the backside of the silicon wafer substrate by the CVD method at a temperature of 500° C. or lower after the step of forming the silicon oxide film, a step of heat treatment where the substrate is kept in an oxidizing atmosphere at a constant temperature of 1100° C. or higher and 1250° C. or lower for 30 minutes or longer and 120 minutes or shorter after the heat treatment, a step of removing surface oxide film formed on the front surface of the substrate, and a step of depositing a silicon monocrystalline epitaxial layer on the substrate after the step of removing the surface oxide film.

Methods for making films including a water-soluble polymeric material and a vapor-deposited inorganic coating are disclosed. The method comprises providing a layer of water-soluble polymeric material and vapor depositing an inorganic coating to at least one surface of the layer of water-soluble polymeric material, wherein the inorganic coating comprises a metal oxide. The method further comprises forming a plurality of microfractures extending along the surface of the inorganic coating.

A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.

A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.

The present invention provides a method of forming a self-rolled metallic nanosheet. The method includes providing a bendable polymeric substrate and forming a hydrogel-based separation layer on the bendable polymeric substrate. A thin-film metallic nanosheet is deposited on the hydrogel-based separation layer, the thin-film metallic nanosheet having a thickness of approximately 150 nm or less to form a nanosheet-hydrogel-polymer composite. Channel cracks are induced in the nanosheet-hydrogel-polymer composite. The hydrogel layer is swelled to delaminate the metallic nanosheet employing the induced channel cracks to form one or more nano-morphology structures selected from scroll morphology, ribbon morphology, spiral morphology, or helix morphology.

The present invention provides a method of forming a self-rolled metallic nanosheet. The method includes providing a bendable polymeric substrate and forming a hydrogel-based separation layer on the bendable polymeric substrate. A thin-film metallic nanosheet is deposited on the hydrogel-based separation layer, the thin-film metallic nanosheet having a thickness of approximately 150 nm or less to form a nanosheet-hydrogel-polymer composite. Channel cracks are induced in the nanosheet-hydrogel-polymer composite. The hydrogel layer is swelled to delaminate the metallic nanosheet employing the induced channel cracks to form one or more nano-morphology structures selected from scroll morphology, ribbon morphology, spiral morphology, or helix morphology.

A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.

A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.

A semiconductor device has a first substrate made of a first semiconductor material, such as silicon. A sacrificial layer is formed over a first surface of the first substrate. A seed layer is formed over the sacrificial layer. A compliant layer is formed over a second surface of the first substrate opposite the first surface of the first substrate. A first semiconductor layer made of a second semiconductor material, such as silicon carbide, dissimilar from the first semiconductor material is formed over the sacrificial layer. The first substrate and sacrificial layer are removed leaving the first semiconductor layer substantially defect-free. The first semiconductor layer containing the second semiconductor material is formed at a temperature greater than a melting point of the first semiconductor material. A second semiconductor layer is formed over the first semiconductor layer with an electrical component formed in the second semiconductor layer.