Patent classifications
C23C16/04
Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
A device for separating analytes is disclosed. The device has a sample injector, sample injection needle, sample reservoir container in communication with the sample injector, chromatography column downstream of the sample injector, and fluid conduits connecting the sample injector and the column. The interior surfaces of the fluid conduits, sample injector, sample reservoir container, and column form a flow path having wetted surfaces. A portion of the wetted surfaces of the flow path are coated with an alkylsilyl coating that is inert to at least one of the analytes. The alkylsilyl coating has the Formula I: ##STR00001##
R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are each independently selected from (C.sub.1-C.sub.6)alkoxy, —NH(C.sub.1-C.sub.6)alkyl, —N((C.sub.1-C.sub.6)alkyl).sub.2, OH, OR.sup.A, and halo. R.sup.A represents a point of attachment to the interior surfaces of the fluidic system. At least one of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 is OR.sup.A. X is (C.sub.1-C.sub.20)alkyl, —O[(CH.sub.2).sub.2O].sub.1-20—, —(C.sub.1-C.sub.10)[NH(CO)NH(C.sub.1-C.sub.10)].sub.1-20—, or —(C.sub.1-C.sub.10)[alkylphenyl(C.sub.1-C.sub.10)alkyl].sub.1-20-.
ORGANIC REACTANTS FOR ATOMIC LAYER DEPOSITION
A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.
METHOD AND APPARATUS FOR SELECTIVE FILM DEPOSITION USING A CYCLIC TREATMENT
A method is provided for selective film deposition on a substrate. According to one embodiment, the method includes providing a substrate containing a first material having a first surface and second material having a second surface, where the first material includes a dielectric material and the second material contains a semiconductor material or a metal-containing material that excludes a metal oxide, reacting the first surface with a reactant gas containing a hydrophobic functional group to form a hydrophobic first surface, and depositing, by gas phase deposition, a metal oxide film on the second surface, where deposition of the metal oxide film is hindered on the hydrophobic first surface.
METHOD FOR PROCESSING NEGATIVE ELECTRODE PLATE, SODIUM-METAL NEGATIVE ELECTRODE PLATE AND RELATED DEVICE
A method for processing a negative electrode plate, a sodium-metal negative electrode plate and related devices. In a vacuum environment, the metal vapor reacts with oxygen, and the metal oxide formed by the reaction is plated on the surface of the sodium-metal negative electrode plate to form a metal oxide protective layer with high mechanical strength and stable chemical properties. The metal oxide protective layer can greatly reduce the phenomenon of low yield and performance deterioration caused by the reaction of sodium metal with air and water during the processing of the sodium-metal negative electrode plate. Since the metal oxide has a nanoscale thickness, it can form a corresponding sodium salt with sodium metal under electrochemical conditions, thereby improving the sodium ion transport rate on the surface of the sodium-metal negative electrode plate and improving the battery’s kinetic performance.
TRANSPARENT MESOPOROUS MATERIALS AND DEVICES COMPRISING SAME
Thermally insulating materials (TIMs) for use in concentrated solar thermal (CST) technologies comprising a mesoporous oxide including a porous oxide matrix comprising a porous oxide and a metal oxide or metal nitride in the form of a conformal layer of the metal oxide or metal nitride on the surface of the porous oxide matrix, wherein the conformal layer completely covers the surface area of the porous oxide matrix, or in the form of metal oxide or metal nitride nanoparticles dispersed throughout the porous oxide matrix, or in the form of a conformal coating or nanoparticles, methods of preparing same, and solar devices comprising same.
ELECTRICALLY CONDUCTIVE MASKING TAPE
Electrically conductive masking tapes include an electrically conductive backing and an electrically conductive pressure sensitive adhesive layer. The pressure sensitive adhesive contains an acrylate-based copolymeric matrix, a crosslinker, an electrically conductive filler, and at least one antioxidant. The acrylate-based copolymeric matrix is the reaction product of a polymerizable mixture including at least one first alkyl(meth)acrylate monomer with a homopolymer Tg of less than −50° C., and at least one hydroxyl-functional alkyl(meth)acrylate with a homopolymer Tg of less than −10° C. The electrically conductive tape is capable of being laminated to and cleanly removed from a substrate surface, after being subjected to harsh conditions such as plasma vapor deposition conditions.
IN-SITU PECVD CAP LAYER
Methods for filling gaps with dielectric material involve deposition using an atomic layer deposition (ALD) technique to fill a gap followed by deposition of a cap layer on the filled gap by a chemical vapor deposition (CVD) technique. The ALD deposition may be a plasma-enhanced ALD (PEALD) or thermal ALD (tALD) deposition. The CVD deposition may be plasma-enhanced CVD (PECVD) or thermal CVD (tCVD) deposition. In some embodiments, the CVD deposition is performed in the same chamber as the ALD deposition without intervening process operations. This in-situ deposition of the cap layer results in a high throughput process with high uniformity. After the process, the wafer is ready for chemical-mechanical planarization (CMP) in some embodiments.
Shadow mask with plasma resistant coating
A mask assembly (100) includes a mask frame (102) and a mask screen (104), both of the mask frame (102) and the mask screen (104) made of a metallic material, and a metal coating (125) disposed on exposed surfaces of one or both of the mask frame (102) and the mask screen (104).
Directional deposition for semiconductor fabrication
A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.
Fine metal mask and method for manufacturing the same, mask assembly and display substrate
The present disclosure provides a fine metal mask and a method for manufacturing the same, a mask assembly and a display substrate. The fine metal mask includes: a mask pattern region and a non-mask region disposed at a periphery of the mask pattern region. The mask pattern region includes at least one first grid pattern region, a barrier ring pattern disposed around the first grid pattern region, and a second grid pattern region disposed at an outer periphery of the barrier ring pattern.