A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densifies a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.

A mask includes a protruding portion provided with a deposition hole formed therethrough and including an upper surface, a lower surface facing the upper surface, and a side surface disposed between the upper surface and the lower surface and inclined at an angle with respect to the lower surface, a peripheral portion including a first surface extending from the upper surface, a second surface facing the first surface and having a step difference with respect to the lower surface of the protruding portion, and a coating layer disposed on the protruding portion. The protruding portion includes at least one of a protrusion protruded from the side surface of the protruding portion and a groove formed by removing at least a portion of the protruding portion from the side surface of the protruding portion, and the coating layer covers at least one of the protrusion and the groove.

A method for processing a component is provided and includes masking a first portion of the component with a maskant. The maskant includes a slurry having a plurality of particles in a fluid carrier. The plurality of particles comprises at least one of silicon, carbon, one or more rare earth disilicates, monosilicates or oxides, and combinations thereof. The method includes depositing a silicon-based coating on a second portion of the component via a chemical vapor deposition process and removing the maskant and any overlying silicon-based coating from the first portion of the component.

A method for coating fibers, includes desizing sized short fibers having an average length less than or equal to 5 mm, the short fibers being made of ceramic material or carbon, sieving the desized short fibers in order to separate them from any agglomerates of sized short fibers still present, introducing the desized and sieved short fibers into a reactor, and coating the short fibers in the reactor by chemical vapor deposition in a fluidized bed.

A deposition mask set includes a first mask, a second mask, and a third mask. Each of the first mask, second, and third masks includes a first edge substantially parallel to a first direction, a second edge substantially parallel to a second direction, and a plurality of first openings. Each of the openings includes a first opening side that is substantially parallel to a third direction and a second opening side that is substantially parallel to a fourth direction, and each of the openings corresponds to one of a first, second, or third color area at one of pixel areas. The third and fourth directions are not parallel to the first and second directions, and the first, second, and third color areas are adjacent to each other in the third direction.

The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.

A thin film deposition method and a method of fabricating an electronic device using the same are disclosed. The thin film deposition method may include preparing a substrate structure having a pattern portion including a hole, adsorbing a reaction inhibitor to inside and outside of the hole in the substrate structure, wherein an adsorption density of the reaction inhibitor may be lower in the inside than the outside, and depositing a metal layer on the inside and outside the hole by an atomic layer deposition (ALD) process, wherein a deposition rate of the depositing may vary depending on regions by the reaction inhibitor, and wherein the reaction inhibitor may include a metal atom and a ligand for reaction inhibition bonded to the metal atom, and the metal atom may remain on the substrate structure in the depositing the metal layer.