The present disclosure relates generally to thin metal films having an ultra-flat surface and methods of their preparation. In particular, the ultra-flat thin metal films comprise FCC metals. Preferably, the thin metal films are attached to a substrate. Preferred substrates comprise chalcogenides and dichalcogenides. Beneficially, the thin metal films described herein can be prepared at ambient temperatures.

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

A bi-layer protective coating for a metal component, the bi-layer protective coating comprising a bond coating that is metallurgically fused to a substrate of the metal component, wherein the bond coating comprises one or more rare metals and a top coating that is mechanically bonded to the bond coating, wherein the top coating comprises one or more metal oxides, or one or more metal carbides.

A bi-layer protective coating for a metal component, the bi-layer protective coating comprising a bond coating that is metallurgically fused to a substrate of the metal component, wherein the bond coating comprises one or more rare metals and a top coating that is mechanically bonded to the bond coating, wherein the top coating comprises one or more metal oxides, or one or more metal carbides.

Biodegradable magnesium alloy implantable medical devices are protected to delay onset of corrosion, and thus biodegradability, or to corrode more uniformly. The protection allows for extended effective use of the devices while maintaining biodegradability. Examples of protective coatings include conversion coatings that at least partially remove exposed second phases from a surface of the magnesium alloy and coatings that provide a barrier between water and the surface of the magnesium alloy.

Biodegradable magnesium alloy implantable medical devices are protected to delay onset of corrosion, and thus biodegradability, or to corrode more uniformly. The protection allows for extended effective use of the devices while maintaining biodegradability. Examples of protective coatings include conversion coatings that at least partially remove exposed second phases from a surface of the magnesium alloy and coatings that provide a barrier between water and the surface of the magnesium alloy.

A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of Ge.sub.2Sb.sub.2+aTe.sub.5+b, in which a and b satisfy the following relations: −0.2<a<0.2 and −0.5<b<0.5.

A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of Ge.sub.2Sb.sub.2+aTe.sub.5+b, in which a and b satisfy the following relations: −0.2<a<0.2 and −0.5<b<0.5.

There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing precoating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.