Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

A part includes a substrate made of a nickel-based superalloy, the substrate having a first average mass fraction of one or more first elements chosen from hafnium, silicon and chromium, the substrate having an open cavity in the part and a cooling channel, the substrate further including a surface layer partially forming the cavity, the surface layer having a second average mass fraction of the first element or first elements which is greater than the first average mass fraction.

Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

Provided is a process for the rapid deposition of highly conformal molybdenum- or tungsten-containing films onto microelectronic device substrates under vapor deposition conditions. In the practice of the invention, a first nucleation step is conducted, while utilizing a generally lower concentration of metal precursor than would ordinarily be utilized in the reaction zone. This utilization of lower metal precursor concentrations can be achieved by way of regulating the temperature of the ampoule (housing the precursor), the concentration of the precursor, pressure in the reaction zone, and the duration of the pulse. In this fashion, a generally lower concentration is utilized to form a nucleation layer of greater than or equal to about 3 Å, or up to about 9, 15, or 25 Å, at which time, the conditions for introducing the precursor are advantageously changed and the concentration of the precursor in the reaction zone is increased for the purpose of bulk deposition.

Provided is a process for the rapid deposition of highly conformal molybdenum- or tungsten-containing films onto microelectronic device substrates under vapor deposition conditions. In the practice of the invention, a first nucleation step is conducted, while utilizing a generally lower concentration of metal precursor than would ordinarily be utilized in the reaction zone. This utilization of lower metal precursor concentrations can be achieved by way of regulating the temperature of the ampoule (housing the precursor), the concentration of the precursor, pressure in the reaction zone, and the duration of the pulse. In this fashion, a generally lower concentration is utilized to form a nucleation layer of greater than or equal to about 3 Å, or up to about 9, 15, or 25 Å, at which time, the conditions for introducing the precursor are advantageously changed and the concentration of the precursor in the reaction zone is increased for the purpose of bulk deposition.

A Method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a vacuum deposition facility including a vacuum chamber; a substrate coated with at least one metal on both sides of the substrate having an average thickness, wherein the coating is deposited homogenously such that the maximum thickness of the coating can exceed the average thickness of 15% maximum. A vacuum deposition facility also is provided.

A Method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a vacuum deposition facility including a vacuum chamber; a substrate coated with at least one metal on both sides of the substrate having an average thickness, wherein the coating is deposited homogenously such that the maximum thickness of the coating can exceed the average thickness of 15% maximum. A vacuum deposition facility also is provided.

Processes and apparatus are described for atmospheric pressure plasma jet deposition onto a substrate. The process comprises feeding a solution comprising a dissolved metal precursor into a plasma jet. The dissolved metal precursor comprises a precursor metal selected from Groups 2 to 16, with the proviso that the precursor metal does not comprise Mn. The plasma jet is directed towards a surface of the substrate such that material from the plasma jet becomes deposited onto the surface of the substrate. The process provides a means to manufacture conductive, semiconducting or insulating deposits on a substrate in a material-efficient manner without the need for high-temperature post-treatment steps.