On a surface of a substrate having a plateable material portion and a non-plateable material portion, a polymer compound, which selectively reacts with an OH end group of the non-plateable material portion, is supplied. By performing a catalyst imparting processing on the substrate on which the polymer compound is supplied, a catalyst is selectively imparted to the plateable material portion. Further, by performing a plating processing on the substrate, a plating layer is selectively formed on the plateable material portion. Before or after forming the plating layer, the polymer compound on the substrate is removed.

Provided is an aluminum alloy substrate for a magnetic disk that includes an aluminum alloy containing 0.4 to 3.0 mass % (hereinafter abbreviated as “%”) of Fe, 0.005% to 1.000% of Cu, and 0.005% to 1.000% of Zn, with a balance of Al and unavoidable impurities. This substrate has a ratio A/B of 0.70 or more, where A indicates a distribution density of Al—Fe intermetallic compound particles having maximum diameters of 10 μm or more and less than 16 μm, and B indicates a distribution density of Al—Fe intermetallic compound particles having maximum diameters of 10 μm or more. The distribution density of Al—Fe intermetallic compound particles having maximum diameters of 40 μm or more is at most one per square millimeter. Also provided are a method of fabricating this aluminum alloy substrate for a magnetic disk and a magnetic disk composed of the aluminum alloy substrate for a magnetic disk.

A semiconductor wafer suppressed in voids produced in the interface between a passivation film and an electroless nickel plating film, and configured such that an electrode pad is entirely covered by the electroless nickel plating film. The semiconductor wafer includes, on a substrate, an electrode pad and a passivation film covering the upper surface of the substrate and an opening from which the electrode pad is exposed. The semiconductor wafer sequentially includes, on the electrode pad, an electroless nickel plating film, an electroless palladium plating film and an electroless gold plating film. A void, present in the interface between the passivation film and the electroless nickel plating film, has a length from the forefront of the void to the surface of the electrode pad of 0.3 μm or more and a width of 0.2 μm or less. The electrode pad is entirely covered by the electroless nickel plating film.

Additive manufacturing compositions and methods for fabricating a conductive article with the same are provided. The additive manufacturing composition may include a 3D printable material and a metal precursor disposed in the 3D printable material. The metal precursor may include a metal salt, a metal particle, or combinations thereof. The method may include forming a first layer of the article on a substrate, where the first layer includes the additive manufacturing composition, forming a second layer of the article adjacent the first layer, and binding the first layer with the second layer to fabricate the article. The method may also include plating a metal on at least a portion of the article to fabricate the conductive article.

Additive manufacturing compositions and methods for fabricating a conductive article with the same are provided. The additive manufacturing composition may include a 3D printable material and a metal precursor disposed in the 3D printable material. The metal precursor may include a metal salt, a metal particle, or combinations thereof. The method may include forming a first layer of the article on a substrate, where the first layer includes the additive manufacturing composition, forming a second layer of the article adjacent the first layer, and binding the first layer with the second layer to fabricate the article. The method may also include plating a metal on at least a portion of the article to fabricate the conductive article.

Additive manufacturing compositions and methods for fabricating a conductive article with the same are provided. The additive manufacturing composition may include a 3D printable material, a plurality of porogens disposed in the 3D printable material, and a metal precursor disposed in the 3D printable material. The metal precursor may include a metal salt, a metal particle, or combinations thereof. The method may include forming a first layer of the article on a substrate, where the first layer includes the additive manufacturing composition, forming a second layer of the article adjacent the first layer, and binding the first layer with the second layer to fabricate the article. The method may also include plating a metal on the article to fabricate the conductive article.

Additive manufacturing compositions and methods for fabricating a conductive article with the same are provided. The additive manufacturing composition may include a 3D printable material, a plurality of porogens disposed in the 3D printable material, and a metal precursor disposed in the 3D printable material. The metal precursor may include a metal salt, a metal particle, or combinations thereof. The method may include forming a first layer of the article on a substrate, where the first layer includes the additive manufacturing composition, forming a second layer of the article adjacent the first layer, and binding the first layer with the second layer to fabricate the article. The method may also include plating a metal on the article to fabricate the conductive article.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

Provided is a method for producing a porous copper foil. The method includes forming a release layer on a metal carrier, growing copper islands on the metal carrier formed with the release layer by electroless copper plating, forming a porous copper thin layer by copper electroplating, and peeling off the porous copper thin layer from the release layer.

Provided is a method for producing a porous copper foil. The method includes forming a release layer on a metal carrier, growing copper islands on the metal carrier formed with the release layer by electroless copper plating, forming a porous copper thin layer by copper electroplating, and peeling off the porous copper thin layer from the release layer.