In a preferred embodiment, there is provided a modified fabric composition, the composition comprising a fabric member and an electroactive member for storing energy, wherein the fabric member comprises a fabric framework defining a deformable plane and a plurality of projections extending at an angle from the plane, and wherein the electroactive member is coupled to at least one of the projections.

In a preferred embodiment, there is provided a modified fabric composition, the composition comprising a fabric member and an electroactive member for storing energy, wherein the fabric member comprises a fabric framework defining a deformable plane and a plurality of projections extending at an angle from the plane, and wherein the electroactive member is coupled to at least one of the projections.

A method of manufacturing a metal fabric or membrane, the method comprises providing an ink comprising a plurality of semiconductor particles disposed in a first solvent. The method comprises applying the ink to a fabric or membrane to obtain a fabric or membrane comprising a plurality of semiconductor particles. Finally, the method comprises contacting the fabric or membrane comprising the plurality of semiconductor particles with a deposition solution comprising a second solvent, an autocatalytic agent, and metal cations to thereby cause a reaction to occur such that the metal cations are reduced and at least partially displace the semiconductor particles, to thereby provide a metal fabric or membrane.

A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.

Disclosed is a multilayer hydrophilic coating, comprising: a base layer comprising oxide particles, wherein a shape of an oxide particle is a hollow, generally spherical shell; a topcoat layer deposited on the base layer, wherein the topcoat layer comprises a sol-gel; and a doping agent, wherein the doping agent is located within the topcoat layer, deposited on the topcoat layer, located between the base layer and the topcoat layer, or combinations thereof.

According to an embodiment, a method of forming a porous layer includes forming a porous layer containing a noble metal on a surface made of a semiconductor by displacement plating. The plating solution used in the displacement plating contains a noble metal source, hydrogen fluoride, and an adjusting agent adjusting a pH value or zeta potential. The noble metal source produces an ion containing the noble metal in water. The plating solution has a pH value in a range of 1 to 6.

The present invention aims to provide an etchant that can provide good deposition of a metal plating such as a nickel plating, despite its acidity, and a method of surface treatment of aluminum or an aluminum alloy using the etchant. Included is an etchant containing a zinc compound and a fluorine compound and having a pH of 4.5 to 6.5.

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

The present invention concerns an electroless gold plating bath comprising a) gold ions; b) sulfite ions; c) iodide ions; d) at least one phosphonate compound according to formula (1)

##STR00001## wherein each X is independently an alkanediyl group; R.sup.1, R.sup.2, R.sup.3 and each R.sup.4 are independently alkanediyl groups; M is independently hydrogen, a metal atom or a cation forming radical; each n is a rational number and selected in accordance with the valency of the respective M; and b is an integer ranging from 1 to 10.

The invention further is directed to the use of the bath and a method for depositing a gold layer on a surface of a substrate. The bath is particularly suitable in the manufacture of printed circuit boards, IC substrates, semiconducting devices, interposers made of glass and the like.