A method for preparing a super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film is provided. A substrate is ultrasonically cleaned in absolute ethyl alcohol and acetone sequentially for 15 min. The substrate is cleaned by argon plasma bombardment for 15 min. A fullerene-like carbon layer A having an onion-like structure is prepared by high-vacuum medium-frequency magnetron sputtering for 30 s. A graphene-like boron nitride layer B is prepared by high-vacuum medium-frequency magnetron sputtering and coating device to sputter the elemental boron target for 30 s. Steps (3) and (4) are repeated 80 times to overlay the fullerene-like carbon layer A and the graphene-like boron nitride layer B in an alternate way. The super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film has a large load capacity, and excellent wear resistance, high temperature resistance and super lubrication.

A three-dimensional (3D) memory device includes a substrate, an alternating conductive/dielectric stack disposed on the substrate, an epitaxial layer disposed on the substrate, a blocking layer disposed on the epitaxial layer and surrounded by the alternating conductive/dielectric stack, a trapping layer disposed on and surrounded by the blocking layer, a tunneling layer disposed on and surrounded by the trapping layer, and a semiconductor layer disposed on and in contact with the epitaxial layer and partially disposed on and surrounded by the tunneling layer.

Provided herein is a hydrogen permeation barrier coating, a coated substrate, and methods of coating a substrate.

A coated cutting tool comprising a substrate comprising a cubic boron nitride sintered body and a coating layer formed on the substrate, wherein the coating layer comprises a Ti carbonitride layer comprising Ti(C.sub.xN.sub.1-x); an average thickness of the Ti carbonitride layer is 0.5 μm or more and 5.0 μm or less; in the Ti carbonitride layer, R75 is higher than R25; in the Ti carbonitride layer, a texture coefficient TC (111) of a (111) plane is 1.0 or more and 2.0 or less; and in X-ray diffraction measurement of the Ti carbonitride layer, an absolute value of a difference between a maximum value and a minimum value of 2θ is 0.1° or less on the (111) plane when the measurement is performed at each of ψ angles of 0°, 30°, 50° and 70°.

A component (100), in particular for a valve train system, having a substrate (3) and a layer system (1) applied at least in parts to the substrate (3), wherein the layer system (1) includes a friction-reducing and wear-reducing protective layer (2) for forming a component surface, wherein the protective layer (2) has at least one first sub-layer (4, 4a) made of doped tetrahedral amorphous carbon, which includes sp.sup.3-hybridized carbon having a mole fraction of at least 50%, wherein the first sub-layer (4, 4a) contains oxygen in a concentration in the range from 0.1 at % to 3.0 at % and hydrogen in a concentration in the range from 0.1 at % to 15 at %, and wherein the first sub-layer (4, 4a) has one or more of the following dopants in a concentration in the range from 0.03 at % to 15 at %: chromium, molybdenum, tungsten, silicon, copper, niobium, zirconium, vanadium, nickel, iron, silver, hafnium, fluorine, boron and nitrogen. A method for producing such a component (100) is also provided.

A coated tool may include a base member and a coating layer located on the base member. The coating layer may include a plurality of AlTi layers including aluminum and titanium as a main component, and a plurality of AlCr layers including aluminum and chromium as a main component. The AlTi layers and the AlCr layers may be located alternately one upon another. The plurality of AlTi layers may include a first AlTi layer and a second AlTi layer located farther away from the base member than the first AlTi layer. Each of the plurality of AlTi layers may further include chromium, and a content ratio of chromium in the second AlTi layer may be higher than a content ratio of chromium in the first AlTi layer.

A method for coating a substrate 11 is disclosed. The method includes at least the following steps: depositing a first base layer 22 comprising a nitride of at least Al and Cr on the substrate 11 by physical vapor deposition at a gradually increasing substrate bias voltage from a first substrate bias voltage to a second substrate bias voltage; depositing a second base layer 23 comprising a nitride of at least Al and Cr on the first base layer 22 by physical vapor deposition at a constant substrate bias voltage that is greater or equal to the second substrate bias voltage; and depositing an outermost indicator layer 24 on the second base layer 23, wherein the outermost indicator layer 24 comprises a nitride of Si and Me, wherein Me is at least one of Ti, Zr, Hf, and Cr, wherein the outermost indicator layer 24 is deposited by physical vapor deposition at a substrate bias voltage that is less than the constant substrate bias voltage applied during deposition of the second base layer 23.

A method for manufacturing a semiconductor substrate by forming an insulator film and a semiconductor single crystal layer on a surface of a silicon single crystal substrate to manufacture a semiconductor substrate having the semiconductor single crystal layer on the insulator film, the method including at least the steps of: forming a silicon nitride film having an epitaxial relationship with the silicon single crystal substrate on the surface of the silicon single crystal substrate as the insulator film by subjecting the silicon single crystal substrate to a heat treatment under a nitrogen gas-containing atmosphere; and forming the semiconductor single crystal layer on the silicon nitride film by epitaxial growth. This makes it possible to obtain a semiconductor substrate by simple method with high productivity at low cost even when the insulator film provided between the silicon single crystal substrate and the semiconductor single crystal layer is a silicon nitride film.

The disclosure discloses a preparation method of a composite coating for a resin matrix composite, comprising the following steps: preparing ceramic-resin composite powders which comprise Al.sub.2O.sub.3 ceramic, a thermosetting resin and a curing agent and are semi-thermosetting resin powders; and respectively spraying pure Al.sub.2O.sub.3 ceramic powders and the composite powders on the surface of the resin matrix composite by supersonic atmospheric plasma spraying to form a ceramic-resin composite coating, wherein the pure Al.sub.2O.sub.3 ceramic powders are fed into jet flow in a manner of feeding powder inside a spray gun, and the composite powders are fed into jet flow in a manner of feeding powder outside the spray gun. Correspondingly, the disclosure also provides a preparation device of a composite coating for a resin matrix composite.

An infrared-cut filter structure is disclosed. The infrared-cut filter structure uses a glass substrate having an upper side and a lower side, with a first multilayer film formed on the upper side and a second multilayer film formed on the lower side so that the infrared-cut filter can effectively filter out infrared light and transmit visible light to produce normal colored images.