The invention relates to a method of manufacture of a scroll compressor (1), in particular for pretreatment for the coating of areas in contact with one another during operation of the scroll compressor (1). The scroll compressor (1) is developed with a non-movable spiral (3) with a base plate (3a) and a spiral-form wall (3b) extending from one side of the base plate (3a), as well as with a movable spiral (4) with a base plate (4a) and a spiral-form wall (4b) extending from a front side of the base plate (4a). The spirals (3, 4) are developed out of a basis material.

The invention relates to a method of manufacture of a scroll compressor (1), in particular for pretreatment for the coating of areas in contact with one another during operation of the scroll compressor (1). The scroll compressor (1) is developed with a non-movable spiral (3) with a base plate (3a) and a spiral-form wall (3b) extending from one side of the base plate (3a), as well as with a movable spiral (4) with a base plate (4a) and a spiral-form wall (4b) extending from a front side of the base plate (4a). The spirals (3, 4) are developed out of a basis material.

Embodiments of the invention relate generally to protective leaching masks, and methods of manufacturing and using the same for leaching superabrasive elements such as polycrystalline diamond elements. In an embodiment, a protective leaching mask assembly includes a superabrasive element including a central axis and a superabrasive table, and a protective mask formed to protect at least a portion of the superabrasive element. The protective mask includes a base portion and at least one sidewall extending from the base portion and defining an opening generally opposite the base portion. The at least one sidewall includes an inner surface configured to abut with a selected portion of the superabrasive element being chemically resistant to a leaching agent and an outer surface sloping at an oblique angle relative to the central axis.

Embodiments of the invention relate generally to protective leaching masks, and methods of manufacturing and using the same for leaching superabrasive elements such as polycrystalline diamond elements. In an embodiment, a protective leaching mask assembly includes a superabrasive element including a central axis and a superabrasive table, and a protective mask formed to protect at least a portion of the superabrasive element. The protective mask includes a base portion and at least one sidewall extending from the base portion and defining an opening generally opposite the base portion. The at least one sidewall includes an inner surface configured to abut with a selected portion of the superabrasive element being chemically resistant to a leaching agent and an outer surface sloping at an oblique angle relative to the central axis.

The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.

The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.

Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.

Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.

Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.

Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.