Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Provided an etching device that is capable of effectively realizing an opening structure with low cost and simplified process. The etching device includes: a porous roller, the porous roller being a hollow structure with openings at both ends, an etching liquid being accommodated in the hollow structure, and the porous roller being provided with a plurality of openings; a pressing roller, attached to the porous roller and arranged above the liquid level of the etching liquid, for pressing and attaching a metal layer to be etched onto the surface of the porous roller; wherein during rotation of the porous roller, the etching liquid passes through at least part of the openings of the plurality of openings and continuously soaks the metal layer in contact with the at least part of the openings, so as to continuously etch the metal layer in contact with the at least part of the openings.

Provided an etching device that is capable of effectively realizing an opening structure with low cost and simplified process. The etching device includes: a porous roller, the porous roller being a hollow structure with openings at both ends, an etching liquid being accommodated in the hollow structure, and the porous roller being provided with a plurality of openings; a pressing roller, attached to the porous roller and arranged above the liquid level of the etching liquid, for pressing and attaching a metal layer to be etched onto the surface of the porous roller; wherein during rotation of the porous roller, the etching liquid passes through at least part of the openings of the plurality of openings and continuously soaks the metal layer in contact with the at least part of the openings, so as to continuously etch the metal layer in contact with the at least part of the openings.

A method for preparing a coplanar waveguide structure includes acquiring a structure to be etched, the structure to be etched including an aluminum film provided on a substrate structure and a photoresist structure provided at an upper end of the aluminum film, wherein the photoresist structure is configured to cover partial areas of the aluminum film; performing a first etching operation on the aluminum film provided on the substrate structure by using an acidic solution to obtain a first etched structure; rinsing the first etched structure to obtain an intermediate structure; performing a second etching operation on the intermediate structure by using an alkaline solution to obtain a second etched structure; and rinsing the second etched structure to obtain a target structure for generating a coplanar waveguide structure, the target structure including the aluminum film and the photoresist structure, wherein the photoresist structure covers all areas of the aluminum film.

According to an embodiment, a substrate treatment apparatus includes a noble metal-containing member having a concave-convex surface including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While convex portions of the concave-convex surface are contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal to remove the metal with etching.

According to an embodiment, a substrate treatment apparatus includes a noble metal-containing member having a concave-convex surface including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While convex portions of the concave-convex surface are contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal to remove the metal with etching.

A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Embodiments of systems and methods of etching material from the surface of a wafer are provided. In one representative embodiment, an apparatus comprises a fluid reservoir configured to receive a fluid including an etchant and one or more wafers in a cassette. The apparatus can further comprise a roller member in the fluid reservoir to frictionally engage the one or more wafers and to displace the one or more wafers with respect to a bottom portion of the cassette when the cassette is in the fluid reservoir. The apparatus can further comprise a motor outside the fluid reservoir and magnetically coupled to the roller member such that activation of the motor causes corresponding rotation of the roller member, and thereby rotation of the one or more wafers when the roller member is in frictional engagement with the one or more wafers.

A chemical engraving machine to engrave a plate of stainless steel moved along an horizontal direction, said machine comprising a base, an acid liquid circuit adapted to chemically attack said plate of stainless steel at locations where it is not protected by a protection mask, a lower guiding device, an upper guiding device, the lower and upper guiding devices being configured to maintain said plate of stainless steel substantially vertically, and a nozzle support bearing a plurality of spraying nozzles projecting horizontally the acid liquid toward the plate of stainless steel. A method chemically engraves a plate of stainless steel in a vertical position.