Systems and methods for selectively etching and depositing material on the surface of a substrate are described. Systems for atomic layer etching (ALE) and atomic layer deposition (ALD) are described which enable alternating exposure to a first precursor and then a second precursor. The substrate processing region is configured to process large surface area substrate (e.g. 300 mm wafers) without requiring direct line-of-sight pathways between the gas inlet into the substrate processing chamber and all portions of the substrate. No plasma excites either of the two precursors either remotely or locally in embodiments. A quartz crystal microbalance is placed close to the substrate pedestal to quantify deposition and etching rates. Only thermal energy from the substrate is used to get the chemical reactions to proceed according to embodiments.

The present invention relates to a process of oxidizing copper in a copper etching solution by using oxygen gas and/or air as an oxidizing agent, the process comprising the steps of: a) introducing the oxidizing agent into an acidic reduced copper etching solution comprising Cl.sup. and Cu.sup.+, b) stirring the solution obtained in step a), and thereby allowing the reaction 2Cu.sup.++O.sub.2 (aq)+2H.sup.+.fwdarw.2Cu.sup.2++H.sub.2O to occur, thereby producing an oxidized copper etching solution comprising less Cu.sup.+ than the reduced copper etching solution. An advantage of the present invention is that it provides an improved process at least in terms of the speed of the oxidation and the quality of the etching.

The present invention relates to a process of oxidizing copper in a copper etching solution by using oxygen gas and/or air as an oxidizing agent, the process comprising the steps of: a) introducing the oxidizing agent into an acidic reduced copper etching solution comprising Cl.sup. and Cu.sup.+, b) stirring the solution obtained in step a), and thereby allowing the reaction 2Cu.sup.++O.sub.2 (aq)+2H.sup.+.fwdarw.2Cu.sup.2++H.sub.2O to occur, thereby producing an oxidized copper etching solution comprising less Cu.sup.+ than the reduced copper etching solution. An advantage of the present invention is that it provides an improved process at least in terms of the speed of the oxidation and the quality of the etching.

A build piece is made from a build plan by an additive metal deposition process, the build plan created from a three dimensional definition of a desired part, the build plan having a first set of dimensions corresponding to the desired part and includes a support structure. The build piece is to a chemical etchant such that the support structure is removed from the build piece and the dimensions of the build piece corresponding to the desired part are reduced to a second set of dimensions.

A build piece is made from a build plan by an additive metal deposition process, the build plan created from a three dimensional definition of a desired part, the build plan having a first set of dimensions corresponding to the desired part and includes a support structure. The build piece is to a chemical etchant such that the support structure is removed from the build piece and the dimensions of the build piece corresponding to the desired part are reduced to a second set of dimensions.

According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.

According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.

Embodiments of the present disclosure disclose a wet etching equipment and a wet etching method. The wet etching equipment includes a metal ion concentration adjusting device configured to adjust the concentration of metal ions in an etching solution, a sprinkler which is connected to the metal ion concentration adjusting device and configured to spray the etching solution. Embodiments of the present disclosure also disclose a wet etching method, comprising steps as follows: adjusting a concentration of metal ions in an etching solution so that an etching rate of a metal to be etched is kept stable; spraying the adjusted etching solution onto the metal to be etched.

Embodiments of the present disclosure disclose a wet etching equipment and a wet etching method. The wet etching equipment includes a metal ion concentration adjusting device configured to adjust the concentration of metal ions in an etching solution, a sprinkler which is connected to the metal ion concentration adjusting device and configured to spray the etching solution. Embodiments of the present disclosure also disclose a wet etching method, comprising steps as follows: adjusting a concentration of metal ions in an etching solution so that an etching rate of a metal to be etched is kept stable; spraying the adjusted etching solution onto the metal to be etched.

A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.