A method of micro-texturing a surface is disclosed. The method includes printing an etchant onto a substrate surface and forming a micro-texture on the substrate surface by removing material from the substrate surface.

A method of micro-texturing a surface is disclosed. The method includes printing an etchant onto a substrate surface and forming a micro-texture on the substrate surface by removing material from the substrate surface.

A method of micro-texturing a substrate surface is disclosed, including printing a maskant on the substrate surface to define exposed surface zones on the substrate surface. The method further includes forming a micro-texture on the substrate surface by removing material from the exposed surface zones, and removing the maskant from the substrate surface.

A method of micro-texturing a substrate surface is disclosed, including printing a maskant on the substrate surface to define exposed surface zones on the substrate surface. The method further includes forming a micro-texture on the substrate surface by removing material from the exposed surface zones, and removing the maskant from the substrate surface.

Systems and methods for copper etch monitoring and control are described. Certain embodiments include utilizing thin-film cells to measure the absorbance of a copper etch solution to determine the etch rate of the solution. In another embodiment, a method of controlling etch rate of a copper etch solution includes detecting characteristics of the copper etch solution utilizing a sensor device, e.g., flow cell and/or attenuated total reflection probe, calculating, based on the detected characteristics of the copper etch solution, the etch rate of the copper etch solution, and adjusting the etch rate of the copper etch solution in response to the calculated etch rate deviating from a specified value.

Systems and methods for copper etch monitoring and control are described. Certain embodiments include utilizing thin-film cells to measure the absorbance of a copper etch solution to determine the etch rate of the solution. In another embodiment, a method of controlling etch rate of a copper etch solution includes detecting characteristics of the copper etch solution utilizing a sensor device, e.g., flow cell and/or attenuated total reflection probe, calculating, based on the detected characteristics of the copper etch solution, the etch rate of the copper etch solution, and adjusting the etch rate of the copper etch solution in response to the calculated etch rate deviating from a specified value.

Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

A wet processing apparatus and an operation method thereof are provided. The wet processing apparatus includes: a tank body including at least one side wall, the at least one side wall being provided with an opening extending from the inside to the outside of the tank body, and the tank body being configured to accommodate a wet processing solution; and a fixing device configured to fix the substrate at the opening of the side wall. The operation method of the wet processing apparatus includes: placing the substrate on an outer side of the side wall and at the position of the opening, and operating the fixing device to fix the substrate; and performing wet processing treatment on the substrate.

A wet processing apparatus and an operation method thereof are provided. The wet processing apparatus includes: a tank body including at least one side wall, the at least one side wall being provided with an opening extending from the inside to the outside of the tank body, and the tank body being configured to accommodate a wet processing solution; and a fixing device configured to fix the substrate at the opening of the side wall. The operation method of the wet processing apparatus includes: placing the substrate on an outer side of the side wall and at the position of the opening, and operating the fixing device to fix the substrate; and performing wet processing treatment on the substrate.

Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.