A surface of an article is modified by aluminizing an initial surface at a first temperature to form a first aluminized layer and a sublayer, removing at least a portion of the first aluminized layer, aluminizing the sublayer at a second temperature to form a second aluminized layer, and finally removing at least a portion of the second aluminized layer to form a processed surface. The second temperature is less than the first temperature and a roughness of the processed surface is less than the roughness of the initial surface.

A surface of an article is modified by aluminizing an initial surface at a first temperature to form a first aluminized layer and a sublayer, removing at least a portion of the first aluminized layer, aluminizing the sublayer at a second temperature to form a second aluminized layer, and finally removing at least a portion of the second aluminized layer to form a processed surface. The second temperature is less than the first temperature and a roughness of the processed surface is less than the roughness of the initial surface.

Provided is a method of preparing a nanocomposite material plated with a network-type metal layer through silica self-cracks and a wearable electronics carbon fiber prepared therefrom. The present disclosure provides a nanocomposite material having excellent electrical conductivity and bending resistance by plating a network-type metal layer on a substrate having a flat surface and/or a curved surface through a method of preparing the nanocomposite material in which the network-type metal layer is plated on silica self-cracks by applying a silica coating solution on the substrate having a flat or curved surface, performing drying after the applying of the silica coating solution to form the silica self-cracks having random crack directions and sizes, and performing electroless metal plating on the surface of the substrate. Further, the present disclosure provides a wearable electronics carbon fiber having excellent electrical conductivity and bending resistance.

Provided is a method of preparing a nanocomposite material plated with a network-type metal layer through silica self-cracks and a wearable electronics carbon fiber prepared therefrom. The present disclosure provides a nanocomposite material having excellent electrical conductivity and bending resistance by plating a network-type metal layer on a substrate having a flat surface and/or a curved surface through a method of preparing the nanocomposite material in which the network-type metal layer is plated on silica self-cracks by applying a silica coating solution on the substrate having a flat or curved surface, performing drying after the applying of the silica coating solution to form the silica self-cracks having random crack directions and sizes, and performing electroless metal plating on the surface of the substrate. Further, the present disclosure provides a wearable electronics carbon fiber having excellent electrical conductivity and bending resistance.

An etchant is described that includes an N-heterocyclic carbene and optionally an appropriate solvent. The etchant was effective at etching a metallic surface having, for example, a metal oxide and/or metal, in both solution phase and vapour-phase. The etchant has been shown to effectively etch oxidized copper and tungsten.

An etchant is described that includes an N-heterocyclic carbene and optionally an appropriate solvent. The etchant was effective at etching a metallic surface having, for example, a metal oxide and/or metal, in both solution phase and vapour-phase. The etchant has been shown to effectively etch oxidized copper and tungsten.

The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

The present invention relates to a polishing composition, and more particularly, to a chemical mechanical polishing (CMP) composition used to chemically and mechanically polish a semiconductor wafer. The polishing composition of the present invention, by comprising anion-modified silica polishing particles in which the zeta potential (ζ) is ≤−10 mV, can exhibit excellent polishing performance, and more specifically, which can achieve a high polishing rate with respect to an indium-containing polishing substrate, while improving the dispersibility of the composition and reducing residual defects on the substrate.

A heat storage apparatus according to the present disclosure includes a heat storage material and a member. The heat storage material forms a clathrate hydrate by cooling. The member has a surface with a plurality of holes. In the case that the lattice constant of the clathrate hydrate is denoted by L and the outside diameter of a cage included in the clathrate hydrate is denoted by D, the plurality of holes are spaced at intervals of 1L to 10L, and each of the plurality of holes has a hole diameter of 1D to 20D.