The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

An etching method that includes using the etching liquid composition containing (A) 0.1 to 15 mass % of hydrogen peroxide, (B) 0.01 to 1 mass % of a fluoride ion source, (C) 2-hydroxyethane sulfonic acid or a salt thereof in an amount of 0.1 to 20 mass % in terms of organic sulfonic acid, (D) 0.01 to 5 mass % of at least one compound selected from the group consisting of azole-based compounds and compounds having a structure that has a 6-membered heterocycle including at least one nitrogen atom and three double bonds, and (E) water, is provided.

An etching method that includes using the etching liquid composition containing (A) 0.1 to 15 mass % of hydrogen peroxide, (B) 0.01 to 1 mass % of a fluoride ion source, (C) 2-hydroxyethane sulfonic acid or a salt thereof in an amount of 0.1 to 20 mass % in terms of organic sulfonic acid, (D) 0.01 to 5 mass % of at least one compound selected from the group consisting of azole-based compounds and compounds having a structure that has a 6-membered heterocycle including at least one nitrogen atom and three double bonds, and (E) water, is provided.

A method including the following steps is provided. A seed layer is formed. Conductive patterns are formed on the seed layer. An etching process with an etchant is performed to remove a portion of the seed layer exposed by the conductive patterns, wherein the etchant includes: 0.1 wt % to 10 wt % of phosphoric acid (H.sub.3PO.sub.4), 0.1 wt % to 10 wt % of hydrogen peroxide (H.sub.2O.sub.2), 1 ppm to 20000 ppm of a protective agent, 1 ppm to 20000 ppm of a wetting agent, and a balance amount of a solvent.

A method for producing a hollow structure useful as a base material for a heat sink or the like which increases a heat dissipation property of devices mounted in various kinds of electronic apparatuses, without sacrificing downsizing, thinning, weight reduction, and multifunctionality, and provides a hollow structure. The method including: producing a plated composite by coating a surface of a core made of aluminum to form a copper plating layer; cutting off part of the plated composite to expose cut surfaces of the core; and turning a part corresponding to the core into a hollow part by immersing the plated composite in a sodium solution which dissolves aluminum but does not dissolve copper and selectively dissolving and removing only the aluminum, thereby producing a hollow structure whose skeletal part is composed of all copper plating layers.

A method of manufacturing three-dimensional thin-film nitinol (NiTi) devices includes: depositing multiple layers of nitinol and sacrificial material on a substrate. A three-dimensional thin-film nitinol device may include a first layer of nitinol and a second layer of nitinol bonded to the first layer at an area masked and not covered by the sacrificial material during deposition of the second layer.

The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.

A metal porous body having a three-dimensional network structure, includes: a framework forming the three-dimensional network structure; and a coating layer having fine pores and coating the framework, the three-dimensional network structure including a rib and a node connecting a plurality of ribs, the framework including an alkali-resistant first metal, the fine pores having an average fine pore diameter of 10 nm or more and 1 m or less, the coating layer including an alkali-resistant second metal and optionally including an alkali-soluble metal, the alkali-soluble metal being contained at a proportion of 0% by mass or more and 30% by mass or less with reference to a total mass of the framework and the coating layer.

A powder descaling composition is disclosed herein, as well as methods for using the same. A benefit to the powder descaling composition can be providing a compact, lightweight powder composition that is easily and efficiently transported, stored, dispensed and used for removing scale from the surfaces of machinery.

A composition for selectively etching a layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt is described, and a corresponding use of said composition. Further is described a process for the manufacture of a semiconductor device, comprising the step of selectively etching at least one layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt by contacting the at least one layer comprising an aluminium compound with the described composition.