A composition for selectively etching a layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt is described, and a corresponding use of said composition. Further is described a process for the manufacture of a semiconductor device, comprising the step of selectively etching at least one layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt by contacting the at least one layer comprising an aluminium compound with the described composition.

A semiconductor interconnect structure that has a first portion included in an upper interconnect level and a second portion included in a lower interconnect level. The semiconductor interconnect structure has a segment of dielectric capping material that is in contact with the bottom of the first portion, which separates, in part, the upper interconnect level from a lower interconnect level. The second portion is in electrical contact with the first portion.

A semiconductor interconnect structure that has a first portion included in an upper interconnect level and a second portion included in a lower interconnect level. The semiconductor interconnect structure has a segment of dielectric capping material that is in contact with the bottom of the first portion, which separates, in part, the upper interconnect level from a lower interconnect level. The second portion is in electrical contact with the first portion.

A connection terminal in which alloy particles made of an intermetallic compound containing tin and palladium are exposed on an outermost surface of a contact configured to electrically contact a mating conductor and distributed on a surface of a base material at least in the contact, wherein: a tin part made of pure tin or an alloy having a higher ratio of tin to palladium than the intermetallic compound is not exposed on a plane passing through a point where a height of the alloy particles from the surface of the base material is highest.

The invention relates to a method for removing metal and/or precious metal-containing depositions from substrates. The substrate is subjected to treatment with an organo amine protectant component P and an inorganic active component A. Component P may be formed in situ by reaction with component R. Component P is an organic amine and/or organic amine hydrochloride. Component A is an inorganic compound and component R is an organic compound that can be split along the CN bond by the component A into an organic amine. The metals in the form of organo-metallic complexes can be isolated and/or separated by means of different chemical reactions and/or biosorption.

The invention relates to a method for removing metal and/or precious metal-containing depositions from substrates. The substrate is subjected to treatment with an organo amine protectant component P and an inorganic active component A. Component P may be formed in situ by reaction with component R. Component P is an organic amine and/or organic amine hydrochloride. Component A is an inorganic compound and component R is an organic compound that can be split along the CN bond by the component A into an organic amine. The metals in the form of organo-metallic complexes can be isolated and/or separated by means of different chemical reactions and/or biosorption.

A method for additively manufacturing an object is provided. The method includes forming the object on a sacrificial layer of a substrate such that the object is secured to a base layer of the substrate via the sacrificial layer. The method further includes removing at least some of the sacrificial layer from the substrate so that the object is no longer secured to the base layer.

A method for additively manufacturing an object is provided. The method includes forming the object on a sacrificial layer of a substrate such that the object is secured to a base layer of the substrate via the sacrificial layer. The method further includes removing at least some of the sacrificial layer from the substrate so that the object is no longer secured to the base layer.

The invention provides a method of wet-etching a laminate of metal films on a base plate in a target predetermined pattern. The metal films include a naturally oxidized Ti film as a top layer. The method includes a resist forming process of forming a resist film having a shape corresponding to the predetermined pattern on the laminate, a top layer selectively etching process of placing the laminate in contact with a top layer selectively etching solution to mainly etch a portion of the top layer that is not covered by the resist film, and a finishing etching process of placing the laminate in contact with a finishing etching solution to etch all layers including the top layer until a target shape of the laminate is obtained.

A method for manufacturing the circuit board comprises following steps of forming a silver layer on each of two opposite surfaces of an insulating substrate, and forming a copper layer on each silver layer, thereby obtaining a middle structure; defining at least one through-hole on the middle structure, and each through-hole extending through each copper layer; forming a copper wiring layer on the copper layers to cover each through-hole and a portion region of the copper layers, the copper wiring layer comprising a copper conductive structure passing through each through-hole, the copper conductive structure connecting the copper layers; removing the copper layers not covered by the copper wiring layer; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers.