Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

A preparation method for adhesive bonding of magnesium-containing aluminum alloy products includes a magnesium-containing aluminum alloy product including a matrix and a surface oxide layer overlying the matrix. The magnesium-containing aluminum alloy product also includes intermetallic particles at least proximal the surface oxide layer. The method also includes ablating at least some of the intermetallic particles via an energy source, and in the absence of melting of the matrix of the magnesium-containing aluminum alloy product.

A method for selective aluminide diffusion coating removal. The method includes diffusing aluminum into a substrate surface of a component to form a diffusion coating. The diffusion coating includes an aluminum-infused additive layer and an interdiffusion zone. The diffusion coating is solution heat treated at a temperature and for a time sufficient to dissolve at least a portion of the interdiffusion zone. Thereafter the aluminum-infused additive layer is selectively removed. An aluminide diffusion coated turbine component is also disclosed.

A method for selective aluminide diffusion coating removal. The method includes diffusing aluminum into a substrate surface of a component to form a diffusion coating. The diffusion coating includes an aluminum-infused additive layer and an interdiffusion zone. The diffusion coating is solution heat treated at a temperature and for a time sufficient to dissolve at least a portion of the interdiffusion zone. Thereafter the aluminum-infused additive layer is selectively removed. An aluminide diffusion coated turbine component is also disclosed.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.

Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.