Disclosed is a dry etching method which includes: a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0 C. to 100 C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and a second step of evaporating the solid product by heating the solid product in an inert gas atmosphere or vacuum atmosphere at a temperature higher than the reaction temperature of the first step, wherein the specific metal element is one or more kinds of elements selected from the group consisting of Ru, Ta, and Nb.

Disclosed is a dry etching method which includes: a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0 C. to 100 C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and a second step of evaporating the solid product by heating the solid product in an inert gas atmosphere or vacuum atmosphere at a temperature higher than the reaction temperature of the first step, wherein the specific metal element is one or more kinds of elements selected from the group consisting of Ru, Ta, and Nb.

Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a -diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the -diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the -diketone. It is preferable that the -diketone used for the dry etching method is supplied from a -diketone filled container, wherein the -diketone filled container has a sealed container body filled with a -diketone whose water content is 15 mass ppm or less relative to the -diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a -diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the -diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the -diketone. It is preferable that the -diketone used for the dry etching method is supplied from a -diketone filled container, wherein the -diketone filled container has a sealed container body filled with a -diketone whose water content is 15 mass ppm or less relative to the -diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

Method for preparing micro-optical structure on a film based on chemical mechanical polishing etching, combining photolithography technology with chemical mechanical polishing technology to make preparation and large-scale integration of large-size high-quality micro optical devices on-chip possible. The method comprises coating metal on film surface, selectively removing the metal film by photolithography (such as femtosecond laser selective ablation, ultraviolet photolithography, electron beam etching, ion beam etching, and reactive ion etching), chemical mechanical polishing, chemical corrosion or over polishing and other steps. Micro-optical devices on-chip prepared by the method have extremely high surface finish and extremely low optical loss. The method is applicable to preparing high-quality micro-optical structures (including but not limited to microdisc cavities, microring cavities, optical waveguides and coupled devices thereof) on various films on-chip (including but not limited to lithium niobate single crystal films, quartz films, silicon films, silicon dioxide films, diamond thin films, etc.).

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

A metal member includes a metal substrate and a porous metal layer. A composite includes the metal member and a resin member. The metal substrate has one surface, is made of a metal material, and has a region formed as an uneven layer having an uneven shape with respect to the one surface. The porous metal layer has a mesh-like shape and is formed on the uneven layer. The uneven layer includes a plurality of protrusions protruding in a direction normal to the one surface.