Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF.sub.3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF.sub.3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.