The described invention provides a method of patterning a thin film deposited on a substrate comprising applying a moving focused field of thermal energy to the thin film deposited on the substrate; and dewetting the thin film from the substrate. Dewetting the thin film from the substrate is characterized by a negative space of a desired design; and displacement of the thin film into adjacent structures, thereby accumulating thin film in the adjacent structures.

The described invention provides a method of patterning a thin film deposited on a substrate comprising applying a moving focused field of thermal energy to the thin film deposited on the substrate; and dewetting the thin film from the substrate. Dewetting the thin film from the substrate is characterized by a negative space of a desired design; and displacement of the thin film into adjacent structures, thereby accumulating thin film in the adjacent structures.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Provided is a metal-resin joined body having a high joint strength and sufficient airtightness and a metal member for obtaining the same. The metal member includes a metal base material made of a metal and a marking pattern having an uneven part formed on a surface of the metal base material, in which the marking pattern is one continuous straight line or curved line, a plurality of the marking patterns is formed to be adjacent to each other and run parallel, and, in a direction orthogonal to a running direction of the plurality of marking patterns, a maximum height roughness Rz of unevenness of the uneven parts and an average interval Rsm of the unevenness by the uneven parts have a relationship of 45?(180/?)?arctan(Rz/(Rsm/2))?75, and a metal-resin joined body includes a resin molded body formed on a surface of this metal member.

A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO.sub.2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.