Various embodiments relate to methods, apparatus, and systems for forming an interconnect structure, or a portion thereof. The method may include contacting the substrate with a functionalization bath comprising a first solvent and a functionalization reactant to form a modified first material, and then depositing a second material on the modified first material through electroless plating, electroplating, chemical vapor deposition, or atomic layer deposition. The first material may be a dielectric material, a barrier layer, or a liner, and the second material may be a barrier layer or a barrier layer precursor, a liner, a seed layer, or a conductive metal that forms the interconnect of the interconnect structure, according to various embodiments.

In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about −1 V to about −6 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

A method of electroplating a target electrode comprises establishing a first electric current through an electrolytic solution, comprising a quantity of an electrically charged material, an initial electrode, and a transitional electrode, so that a quantity of the electrically charged material is converted to a quantity of an electrically neutral material, which is electroplated, as a deposit, onto the transitional electrode; and establishing a second electric current through the electrolytic solution, the transitional electrode, and the target electrode so that a quantity of the electrically neutral material from the deposit is converted to a quantity of the electrically charged material, which is dissolved into the electrolytic solution, and a quantity of the electrically charged material in the electrolytic solution is converted to a quantity of the electrically neutral material, which is electroplated onto the surface of the target electrode.

A method of electroplating a target electrode comprises establishing a first electric current through an electrolytic solution, comprising a quantity of an electrically charged material, an initial electrode, and a transitional electrode, so that a quantity of the electrically charged material is converted to a quantity of an electrically neutral material, which is electroplated, as a deposit, onto the transitional electrode; and establishing a second electric current through the electrolytic solution, the transitional electrode, and the target electrode so that a quantity of the electrically neutral material from the deposit is converted to a quantity of the electrically charged material, which is dissolved into the electrolytic solution, and a quantity of the electrically charged material in the electrolytic solution is converted to a quantity of the electrically neutral material, which is electroplated onto the surface of the target electrode.

In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 1 to about 6, and applying a cathodic potential in the range of about −0.5 V to about −4 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

An acidic aqueous solution containing a chelating agent and an acid, wherein the chelating agent is glutamic acid N,N-diacetic acid (GLDA) or a salt thereof, and wherein the amount of GLDA or the salt thereof is at least 10 wt %, based on the weight of the aqueous solution, and to the use thereof as an oilfield chemical, in descaling processes, or in processes in which highly concentrated aqueous acids are used, such as cleaning processes or plating processes.

An acidic aqueous solution containing a chelating agent and an acid, wherein the chelating agent is glutamic acid N,N-diacetic acid (GLDA) or a salt thereof, and wherein the amount of GLDA or the salt thereof is at least 10 wt %, based on the weight of the aqueous solution, and to the use thereof as an oilfield chemical, in descaling processes, or in processes in which highly concentrated aqueous acids are used, such as cleaning processes or plating processes.

Provided is a metal coating film formation device capable of forming a film using a simple device configuration and in a short time, and capable of performing the formation of a film of metal coating continuously for a long period. A film formation device 1A is provided with an anode 11, a solid electrolyte film 13 disposed between the anode 11 and the base material B, and a power supply unit 16 that applies a voltage between the anode 11 and the base material B. The anode 11 is a non-porous anode comprising the same metal as the metal of the metal coating. Between the anode 11 and the solid electrolyte film 13, a porous material 14 is disposed in contact with the anode 11 and the solid electrolyte film 13. The porous material 14 includes a plurality of pores providing communication between the anode 11 and the solid electrolyte film 13 and being supplied with a metal solution L.

Provided is a metal coating film formation device capable of forming a film using a simple device configuration and in a short time, and capable of performing the formation of a film of metal coating continuously for a long period. A film formation device 1A is provided with an anode 11, a solid electrolyte film 13 disposed between the anode 11 and the base material B, and a power supply unit 16 that applies a voltage between the anode 11 and the base material B. The anode 11 is a non-porous anode comprising the same metal as the metal of the metal coating. Between the anode 11 and the solid electrolyte film 13, a porous material 14 is disposed in contact with the anode 11 and the solid electrolyte film 13. The porous material 14 includes a plurality of pores providing communication between the anode 11 and the solid electrolyte film 13 and being supplied with a metal solution L.

A non-cyanide gold plating bath 1 contains gold ions and a compound represented by the following chemical formula (chem 1): ##STR00001##