A coating system includes an electrocoat (e-coat) bath having an e-coat fluid with a first amount of dissolved gases, a plurality of ultrasonic transducers mounted on at least two sides of the e-coat bath, a carrier frame and control circuitry. The control circuitry is configured to control a trajectory of a metal part dipped in the e-coat bath using the carrier frame, control the plurality of ultrasonic transducers to direct a plurality of acoustic waves at a defined ultrasonic operating frequency and at a first intensity to cause a plurality of localized pressure drops in the e-coat fluid, the first amount of dissolved gases is reduced or removed as bubbles from the e-coat fluid of the e-coat bath based on the directed plurality of acoustic waves, and increase the first intensity of the directed plurality of acoustic waves over a defined time period to accelerate dispersion of an e-coat pigment.

A coating system includes an electrocoat (e-coat) bath having an e-coat fluid with a first amount of dissolved gases, a plurality of ultrasonic transducers mounted on at least two sides of the e-coat bath, a carrier frame and control circuitry. The control circuitry is configured to control a trajectory of a metal part dipped in the e-coat bath using the carrier frame, control the plurality of ultrasonic transducers to direct a plurality of acoustic waves at a defined ultrasonic operating frequency and at a first intensity to cause a plurality of localized pressure drops in the e-coat fluid, the first amount of dissolved gases is reduced or removed as bubbles from the e-coat fluid of the e-coat bath based on the directed plurality of acoustic waves, and increase the first intensity of the directed plurality of acoustic waves over a defined time period to accelerate dispersion of an e-coat pigment.

Described herein are methods of applying metals to substrates, where the methods include contacting the substrate with an aqueous metal plating composition comprising polyammonium bisulfate (“PABS”) and a dissolved metal or salt thereof. The methods allow application of metals to the substrate without need for electrical energy input or for an added chemical catalyst, chelating agent, complexing agent, reducing agent, stabilizer, or pH-modifying (or controlling) chemical compound.

Described herein are methods of applying metals to substrates, where the methods include contacting the substrate with an aqueous metal plating composition comprising polyammonium bisulfate (“PABS”) and a dissolved metal or salt thereof. The methods allow application of metals to the substrate without need for electrical energy input or for an added chemical catalyst, chelating agent, complexing agent, reducing agent, stabilizer, or pH-modifying (or controlling) chemical compound.

An electrode for electrolytic fluorination contains nickel as a base material with a fluorine content <1,000 ppm. Preferably, in at least a surface portion thereof, the nickel content ≥99 mass %, the iron content ≤400 ppm, the copper content ≤250 ppm, and the manganese content ≤1,000 ppm. A method for producing an electrode includes arranging a nickel base material electrode in a nickel plating bath as a cathode, and applying nickel plating to the nickel base material electrode by electrolytic nickel plating, the method including (1) using, as an anode, a nickel component deposited on a cathode, or a nickel component that has settled in a molten salt, in a process of producing nitrogen trifluoride by molten salt electrolysis using a nickel base material anode, or the nickel base material anode; or (2) using, as the cathode, the nickel base material anode.

Provided are methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition, e.g., less than 200° C. Specifically, these processes allow precise control of the morphology, composition, and size of deposited structures. For example, the deposited structure may be doped, alloyed, or surface treated during their deposition using a combination of different precursors. In particular, silicon structure may be pre-lithiated while these structures are being formed. The selection of working electrodes (surface size and properties), electrolyte composition, and other parameters result in different types of structures, e.g., precipitating from the electrolyte or deposited on the electrode. Low-temperature plating does not require a lot of energy and volatile and invisible precursors. Furthermore, this plating produces a more confined waste stream, suitable for post-reaction recycling. Finally, low-temperature electrochemical deposition can be readily scaled up such that plating bathes and electrode sizes can be chosen to fit the production requirements.

Provided are methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition, e.g., less than 200° C. Specifically, these processes allow precise control of the morphology, composition, and size of deposited structures. For example, the deposited structure may be doped, alloyed, or surface treated during their deposition using a combination of different precursors. In particular, silicon structure may be pre-lithiated while these structures are being formed. The selection of working electrodes (surface size and properties), electrolyte composition, and other parameters result in different types of structures, e.g., precipitating from the electrolyte or deposited on the electrode. Low-temperature plating does not require a lot of energy and volatile and invisible precursors. Furthermore, this plating produces a more confined waste stream, suitable for post-reaction recycling. Finally, low-temperature electrochemical deposition can be readily scaled up such that plating bathes and electrode sizes can be chosen to fit the production requirements.

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

A seeded substrate is first prepared. The seeded substrate includes an insulation substrate having a main surface composed of a first region and a second region other than the first region, and a conductive seed layer provided on the first region. Subsequently, a conductive layer is formed on at least the second region to obtain a first treated substrate. An insulation layer is then formed on the first treated substrate. The seed layer is then exposed. A metal layer is then formed on the surface of the seed layer. Here, a voltage is applied between the anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing solution being disposed between the second treated substrate and the anode, and the solid electrolyte membrane and the seed layer being pressed into contact with each other. Thereafter, the insulation layer and the conductive layer are removed.