A rotational surface treating device with a high treatment efficiency that allows a treatment liquid to be discharged in a short time is provided. When a treatment bath 2 is rotated, parts 20 contact an electrode 50 to be electroplated. In this event, a plating liquid 16 is used as circulated by a pump P. The plating liquid 16 is discharged to the outside through a gap in a side wall 80 for replacement of the plating liquid 16 or the like. During discharge, the plating liquid 16 is not circulated by the pump P. The gap 8 which is formed in the side wall 80 is formed to be smaller than the minimum dimension of the parts 20 on the inner side. The gap 8 is formed to be wider toward the outer side. Thus, water is discharged immediately.

An active (consumable) anode includes, in one aspect, a generally annular body and a protrusion used for connecting the anode to the power supply, where the protrusion extends outward from the generally annular body of the anode. The compositions of the generally annular body and of the protrusion are the same, and, in some embodiments, the anode is a one-piece anode that does not include any welding seams. Such structure results in reduced voltage fluctuations during plating and in improved control over plating uniformity. In some embodiments, the anode is a copper anode, a cobalt anode, or a nickel anode machined from a single sheet of anode-grade metal. The provided anode can be used in an electroplating apparatus as a secondary, peripherally disposed anode, in conjunction with a more centrally located primary anode. The provided anode is configured to modulate electroplating at the edge of the substrate.

An active (consumable) anode includes, in one aspect, a generally annular body and a protrusion used for connecting the anode to the power supply, where the protrusion extends outward from the generally annular body of the anode. The compositions of the generally annular body and of the protrusion are the same, and, in some embodiments, the anode is a one-piece anode that does not include any welding seams. Such structure results in reduced voltage fluctuations during plating and in improved control over plating uniformity. In some embodiments, the anode is a copper anode, a cobalt anode, or a nickel anode machined from a single sheet of anode-grade metal. The provided anode can be used in an electroplating apparatus as a secondary, peripherally disposed anode, in conjunction with a more centrally located primary anode. The provided anode is configured to modulate electroplating at the edge of the substrate.

Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. The shield is positioned in close proximity of the substrate (e.g., within a distance that is equal to 0.1 of the substrate's radius). The shield in some embodiments may be an ionically resistive ionically permeable element having an azimuthally asymmetric distribution of channels.

Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. The shield is positioned in close proximity of the substrate (e.g., within a distance that is equal to 0.1 of the substrate's radius). The shield in some embodiments may be an ionically resistive ionically permeable element having an azimuthally asymmetric distribution of channels.

A film deposition device (1A) of a metal film (F) includes a positive electrode (11), a solid electrolyte membrane (13), and a power supply part (14) that applies a voltage between the positive electrode (11) and a base material (B) to be a negative electrode. The solid electrolyte membrane (13) allows a water content to be 15% by mass or more and is capable of containing a metal ion. The power supply part (14) applies a voltage between the positive electrode and the base material in a state where the solid electrolyte membrane is disposed on a surface of the positive electrode such that metal made of metal ions contained inside the solid electrolyte membrane (13) is precipitated on a surface of the base material (B).

A film deposition device (1A) of a metal film (F) includes a positive electrode (11), a solid electrolyte membrane (13), and a power supply part (14) that applies a voltage between the positive electrode (11) and a base material (B) to be a negative electrode. The solid electrolyte membrane (13) allows a water content to be 15% by mass or more and is capable of containing a metal ion. The power supply part (14) applies a voltage between the positive electrode and the base material in a state where the solid electrolyte membrane is disposed on a surface of the positive electrode such that metal made of metal ions contained inside the solid electrolyte membrane (13) is precipitated on a surface of the base material (B).

An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

Superconformally filling a recessed feature includes: contacting the recessed feature with superconformal filling composition that includes: Au(SO.sub.3).sub.2.sup.3 anions; SO.sub.3.sup.2 anions; and Bi.sup.3+ cations; convectively transporting Au(SO.sub.3).sub.2.sup.3 and Bi.sup.3+ to the bottom member of the recessed feature; subjecting the recessed feature to an electrical current to superconformally deposit gold from the Au(SO.sub.3).sub.2.sup.3 on the bottom member relative to the sidewall and the field, the electrical current providing a cathodic voltage; and increasing the electrical current subjected to the field and the recessed feature to maintain the cathodic voltage between 0.85 V and 1.00 V relative to the SSE during superconformally depositing gold on the substrate to superconformally fill the recessed feature of the article with gold as a superconformal filling of gold, the superconformal filling being void-free and seam-free.