A vapor deposition metal mask substrate includes a nickel-containing metal sheet including a obverse surface and a reverse surface, which is opposite to the obverse surface. At least one of the obverse surface and the reverse surface is a target surface for placing a resist layer. The target surface has a surface roughness Sa of less than or equal to 0.019 m. The target surface has a surface roughness Sz of less than or equal to 0.308 m.

A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

A vapor deposition metal mask substrate includes a nickel-containing metal sheet including a obverse surface and a reverse surface, which is opposite to the obverse surface. At least one of the obverse surface and the reverse surface is a target surface for placing a resist layer. The target surface has a surface roughness Sa of less than or equal to 0.019 m. The target surface has a surface roughness Sz of less than or equal to 0.308 m.

An advanced electrodeposited copper foil and a copper clad laminate using the same are provided. The advanced electrodeposited copper foil has an uneven micro-roughened surface. As observed by a scanning electron microscope operated with a +35 degree tilt and under 1,000 magnification, the uneven micro-roughened surface has a plurality of production direction stripes formed by copper crystals.

An advanced electrodeposited copper foil and a copper clad laminate using the same are provided. The advanced electrodeposited copper foil has an uneven micro-roughened surface. As observed by a scanning electron microscope operated with a +35 degree tilt and under 1,000 magnification, the uneven micro-roughened surface has a plurality of production direction stripes formed by copper crystals.

An advanced electrodeposited copper foil having long and island-shaped microstructures and a copper clad laminate using the same are provided. The advanced electrodeposited copper foil includes a micro-roughened surface. The micro-roughened surface has a plurality of copper crystals, a plurality of copper whiskers and a plurality of copper crystal groups which are in a non-uniform distribution and form into a long and island-shaped pattern.

An advanced electrodeposited copper foil having long and island-shaped microstructures and a copper clad laminate using the same are provided. The advanced electrodeposited copper foil includes a micro-roughened surface. The micro-roughened surface has a plurality of copper crystals, a plurality of copper whiskers and a plurality of copper crystal groups which are in a non-uniform distribution and form into a long and island-shaped pattern.

A metallic terminal includes a terminal body, a first plating layer, a second plating layer, and a third plating layer. The first plating layer is on the terminal body, and the thickness of the first plating layer at the bent portion of the terminal body is 0.3 to 1.75 micrometers, and the thickness of rest portions of the first plating layer is 2 to 10 micrometers. The second plating layer is on the first plating layer and corresponds to the contact portion of the terminal body, and the thickness of the second plating layer is 0.5 to 2 micrometers. The third plating layer is on the first plating layer and corresponds to the soldering portion of the terminal body, and the thickness of the third plating layer is 0.01 to 0.1 micrometers. A manufacturing method of metallic terminal is also provided.

A leadless packaged semiconductor device includes a metal substrate having at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define spaced apart metal pads on at least two sides of the first through-hole aperture. A semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads is mounted top side up on the first outer ring. A metal die attach layer is directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture that provides a die attachment that fills a bottom portion of the first through-hole aperture. Bond wires are between metal pads and the bond pads. A mold compound is also provided including between adjacent ones of the metal pads.

A leadless packaged semiconductor device includes a metal substrate having at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define spaced apart metal pads on at least two sides of the first through-hole aperture. A semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads is mounted top side up on the first outer ring. A metal die attach layer is directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture that provides a die attachment that fills a bottom portion of the first through-hole aperture. Bond wires are between metal pads and the bond pads. A mold compound is also provided including between adjacent ones of the metal pads.