C25D5/18

METHOD FOR ELECTRODEPOSITING A FUNCTIONAL OR DECORATIVE CHROMIUM LAYER FROM A TRIVALENT CHROMIUM ELECTROLYTE

A method for the electrodeposition of a functional or decorative chromium layer onto a metallic substrate in an electrodeposition process from a halide-ion free and boric acid free aqueous electrolyte solution and to the coated product obtained thereby.

Electroplating Method for Enhancing the Performance of Rolled-Up Passive Components
20220119976 · 2022-04-21 ·

An electroplating method for enhancing the performance of rolled-up passive components comprises providing an array of rolled-up passive components on a substrate, where each rolled-up passive component comprises a multilayer strip in a rolled configuration including multiple turns spaced apart by gaps. The multilayer strip comprises a conductive pattern layer on a strain-relieved layer, and a core of each rolled-up passive component is defined by a first of the multiple turns. A layer comprising a functional material is electroplated onto the conductive pattern layer of each rolled-up passive component, thereby at least partly filling the gaps and/or the core with the functional material.

PLATING APPARATUS AND METHOD FOR ELECTROPLATING WAFER

A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Hydrogen gas sensors based on nanoparticle-decorated, patterned carbon nanotube ropes

Nanoparticle(NP)-decorated carbon nanotube (CNT) ropes used as sensing elements for hydrogen gas (H.sub.2) chemiresistors are described herein. The NP-decorated CNT rope sensors were prepared by dielectrophoretic deposition of a single semiconducting CNT rope followed by the electrodeposition of metal nanoparticles to highly disperse said nanoparticles on the CNT surfaces. The rope sensors produced a relative resistance change 20-30 times larger than what was observed at single, pure Pd nanowires. Thus, the rope sensors improved upon all H.sub.2 sensing metrics (speed, dynamic range, and limit-of-detection) relative to single Pd nanowires.

Hydrogen gas sensors based on nanoparticle-decorated, patterned carbon nanotube ropes

Nanoparticle(NP)-decorated carbon nanotube (CNT) ropes used as sensing elements for hydrogen gas (H.sub.2) chemiresistors are described herein. The NP-decorated CNT rope sensors were prepared by dielectrophoretic deposition of a single semiconducting CNT rope followed by the electrodeposition of metal nanoparticles to highly disperse said nanoparticles on the CNT surfaces. The rope sensors produced a relative resistance change 20-30 times larger than what was observed at single, pure Pd nanowires. Thus, the rope sensors improved upon all H.sub.2 sensing metrics (speed, dynamic range, and limit-of-detection) relative to single Pd nanowires.

ANODIZING METHOD AND MANUFACTURING METHOD FOR AN ANISOTROPIC CONDUCTIVE MEMBER
20210363653 · 2021-11-25 · ·

There are provided an anodizing method by which straight micropores can be formed and a manufacturing method for an anisotropic conductive member in which a filling defect of a conductive material is suppressed. The anodizing method is a method including subjecting a surface of a valve metal plate to a plurality of times of anodization and forming an anodized film having micropores present in a thickness direction of the valve metal plate and having a barrier layer present in the bottom part of the micropores, on the surface of the valve metal plate. In steps of second and subsequent times of anodization of the plurality of times of anodization, a current increasing period and a current keeping period are continuous. The current increasing period is a period in which a quantity of current increase is more than 0 amperes per square meter per second and 0.2 amperes per square meter per second or less, and which is 10 minutes or less. A current is kept at a constant value during a current keeping period, and the constant value is equal to or less than a maximum current value during the current increasing period.

Cobalt chemistry for smooth topology

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

Cobalt chemistry for smooth topology

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

COMPOSITION FOR COBALT PLATING COMPRISING ADDITIVE FOR VOID-FREE SUBMICRON FEATURE FILLING

Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.

COMPOSITION FOR COBALT PLATING COMPRISING ADDITIVE FOR VOID-FREE SUBMICRON FEATURE FILLING

Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.