An interconnect structure of a semiconductor device includes a conductive via and a barrier layer lining an interface between a dielectric layer and the conductive via. The barrier layer is selectively deposited along sidewalls of a recess formed in a dielectric layer. The conductive via is formed by selectively electroplating electrically conductive material such as rhodium, iridium, or platinum in an opening of the recess, where the conductive via is grown upwards from an exposed metal surface at a bottom of the recess. The conductive via includes an electrically conductive material having a low electron mean free path, low electrical resistivity, and high melting point. The interconnect structure of the semiconductor device has reduced via resistance and improved resistance to electromigration and/or stress migration.

An interconnect structure of a semiconductor device includes a conductive via and a barrier layer lining an interface between a dielectric layer and the conductive via. The barrier layer is selectively deposited along sidewalls of a recess formed in a dielectric layer. The conductive via is formed by selectively electroplating electrically conductive material such as rhodium, iridium, or platinum in an opening of the recess, where the conductive via is grown upwards from an exposed metal surface at a bottom of the recess. The conductive via includes an electrically conductive material having a low electron mean free path, low electrical resistivity, and high melting point. The interconnect structure of the semiconductor device has reduced via resistance and improved resistance to electromigration and/or stress migration.

Provided is an apparatus for electro-forming. The apparatus for electro-forming includes a plating bath which is a space where a substrate is plated and a clamp disposed within the plating bath and configured to grasp the substrate disposed in a horizontal direction. The apparatus for electro-forming further includes an assembly including an anode spaced above the substrate and connected to an external power supply and a plating solution supply unit spaced above the substrate and configured to supply a plating solution. The apparatus for electro-forming also includes a driving unit configured to reciprocate the assembly in a horizontal direction at a distance from the substrate. The assembly further includes an insulator between the anode and the plating solution supply unit.

Provided is an apparatus for electro-forming. The apparatus for electro-forming includes a plating bath which is a space where a substrate is plated and a clamp disposed within the plating bath and configured to grasp the substrate disposed in a horizontal direction. The apparatus for electro-forming further includes an assembly including an anode spaced above the substrate and connected to an external power supply and a plating solution supply unit spaced above the substrate and configured to supply a plating solution. The apparatus for electro-forming also includes a driving unit configured to reciprocate the assembly in a horizontal direction at a distance from the substrate. The assembly further includes an insulator between the anode and the plating solution supply unit.

An electrochemical deposition apparatus and method for the selective recovery of metal. The electrochemical deposition apparatus comprises a porous cathodic material, an anode, an inter-electrode region formed by the anode and cathode, and a gas release channel. The method may comprise passing a solution comprising a metal into a cavity, changing an oxidation state of a metal, and selectively depositing the metal onto a porous cathodic material. The electrochemical deposition apparatus may recover metal from metal feed in the form of metal hydroxides. The recovered metal may be from any source including, but not limited to, minerals, electronic waste, and black mass.

Methods for treating a substrate are disclosed. The substrate is deoxidized and then immersed in an electrodepositable pretreatment composition comprising a lanthanide series element and/or a Group IIIB metal, an oxidizing agent, and a metal-complexing agent to deposit a coating from the electrodepositable pretreatment composition onto a surface of the substrate. Optionally, the electrodepositable pretreatment composition may comprise a surfactant. A coating from a spontaneously depositable pretreatment composition comprising a Group IIIB and/or Group IVB metal may be deposited on the substrate surface prior to electrodepositing a coating from the electrodepositable pretreatment composition. Following electrodeposition of the electrodepositable pretreatment composition, the substrate optionally may be contacted with a sealing composition comprising phosphate and a Group IIIB and/or IVB metal. Substrates treated according to the methods also are disclosed.

The present invention relates to 2D-material based composite materials such as aerogels and particularly, although not exclusively, to deposition of nanoparticles on 2D-material based aerogels. Also described are methods for manufacturing such materials.

The present invention relates to 2D-material based composite materials such as aerogels and particularly, although not exclusively, to deposition of nanoparticles on 2D-material based aerogels. Also described are methods for manufacturing such materials.

In example implementations, a method for coloring an alloy is provided. The method includes anodizing a substrate in an anodizing bath comprising phosphoric acid, at a constant temperature and a constant voltage for a first time period to develop an anodizing layer that includes a barrier layer, reducing the constant voltage applied to the anodizing bath for a second time period to change a thickness of the barrier layer and change a width of pores in the anodizing layer, plating the substrate in a plating bath at a first current that is increased over a third time period in accordance with a current profile of the plating bath, and plating the substrate in the plating bath at a second current for a fourth time period.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.