A process for efficiently producing a wiring board in which an insulating substrate 1 having a through hole 2 is used, which includes forming a seed layer 3 on one surface of the insulating substrate 1, covering the surface of the insulating substrate 1 on which the seed layer 3 is formed with a masking film 4, arranging the insulating substrate 1 and a positive electrode 5 so that the surface of the insulating substrate 1 opposite to the surface of the insulating substrate 1 on which the seed layer 3 of the insulating substrate 1 is formed is faced to the positive electrode 5, carrying out electroplating to form a metal layer 8 in the through hole 2, and then removing the masking film 4.

A process for efficiently producing a wiring board in which an insulating substrate 1 having a through hole 2 is used, which includes forming a seed layer 3 on one surface of the insulating substrate 1, covering the surface of the insulating substrate 1 on which the seed layer 3 is formed with a masking film 4, arranging the insulating substrate 1 and a positive electrode 5 so that the surface of the insulating substrate 1 opposite to the surface of the insulating substrate 1 on which the seed layer 3 of the insulating substrate 1 is formed is faced to the positive electrode 5, carrying out electroplating to form a metal layer 8 in the through hole 2, and then removing the masking film 4.

A tool including a tool body, the tool body including a substrate having a tool-side surface, an intermediate layer positioned over the tool-side surface, and an outer layer positioned over the intermediate layer, the outer layer including a metallic material.

Described herein are methods of preparing nanolaminated brass coatings and components having desirable and useful properties. Also described are nanolaminated brass components and plastic and polymeric substrates coated with nanolaminated brass coatings having desirable and useful properties.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

A method of forming a high-conductivity electrical interconnect on a substrate may include forming a graphene film with a plurality of graphene members, depositing a metal over the graphene film, and providing a metallic overlay that connects the plurality of graphene members together through the depositing operation to form a covered graphene film.

A method of forming a high-conductivity electrical interconnect on a substrate may include forming a graphene film with a plurality of graphene members, depositing a metal over the graphene film, and providing a metallic overlay that connects the plurality of graphene members together through the depositing operation to form a covered graphene film.

In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.

In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.