A plating method capable of controlling a concentration of an additive within a proper range during plating of a substrate is disclosed. The plating method includes: disposing an anode and a substrate, having a via-hole formed in a surface thereof, so as to face each other in a plating solution containing an additive; applying a voltage between the anode and the substrate for filling the via-hole with metal; measuring the voltage applied to the substrate; calculating an amount of change in the voltage per predetermined time; and adjusting a concentration of the additive in the plating solution to keep the amount of change in the voltage within a predetermined control range.

Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Exemplary methods of semiconductor processing may include performing an electroplating operation on a semiconductor substrate in an electroplating bath within a vessel of an electroplating system. The methods may include removing the semiconductor substrate from the electroplating bath. The methods may include closing a valve associated with a first drain from the electroplating system. The methods may include increasing flow to a second drain from the electroplating system. The second drain may be associated with a drain channel from the vessel of the electroplating system.

Exemplary methods of semiconductor processing may include performing an electroplating operation on a semiconductor substrate in an electroplating bath within a vessel of an electroplating system. The methods may include removing the semiconductor substrate from the electroplating bath. The methods may include closing a valve associated with a first drain from the electroplating system. The methods may include increasing flow to a second drain from the electroplating system. The second drain may be associated with a drain channel from the vessel of the electroplating system.

A method of manufacturing a semiconductor structure includes the following operations. A photoresist layer is formed on a metal layer, in which the photoresist layer includes an additive selected from the group consisting of a first heterocyclic compound containing a triazole ring, a second heterocyclic compound containing an imidazole ring, biphenyl thiol, biphenyl dithiol, benzenethiol, and benzenedithiol. The photoresist layer is exposed to an actinic radiation. The photoresist layer is developed by a developer to form holes in the photoresist layer. Redistribution lines are formed in the holes by an electroplating process.

A method of manufacturing a semiconductor structure includes the following operations. A photoresist layer is formed on a metal layer, in which the photoresist layer includes an additive selected from the group consisting of a first heterocyclic compound containing a triazole ring, a second heterocyclic compound containing an imidazole ring, biphenyl thiol, biphenyl dithiol, benzenethiol, and benzenedithiol. The photoresist layer is exposed to an actinic radiation. The photoresist layer is developed by a developer to form holes in the photoresist layer. Redistribution lines are formed in the holes by an electroplating process.

A method of electroplating metal into features of a partially fabricated electronic device on a substrate having high open area portions is provided. The method includes initiating a bulk electrofill phase with a pulse at a high level of current; reducing the current to a baseline current level; and optionally increasing the current in one or more steps until electroplating is complete.

In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.