A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

The present invention discloses an integrated miniature welding plate structure and manufacturing process therefor, which consists of pads with welded dots, welding wires and a welding plate; the manufacturing process of the welding plate consists of following steps: S1. Punching holes, take a SMT patch fixed with several welding plates, punch holes in the welding plates in accordance with the requirements; S2 Electroplating, electroplate a metal layer with electroplating process onto the inner walls of the holes in each of the welding plates; S3. Gluing, pour the insulation colloid into the holes in each of the welding plates, then electroplate a metal layer onto both ends of the colloid; S4. Cutting, cut each of the welding plates off the patch. The beneficial effects are: the welding wires are welded with the welding plates, then the welding plates are connected with the welded dots of the to-be-welded parts, the adopted welding method of the welding plates can improve the overall welding efficiency, ensure the welding strength of the welded dots and improve the welding quality; the structure design of the base plate and vertical plate is adopted for the welding plates, the welding wires are welded onto the vertical plates in a centralized manner, so the status that the welding wires not being parallel and upright can be obviously improved.

Techniques including methods and apparatuses for selective measurement and monitoring of halide concentrations in processing solutions for iron triad metals and their alloys are provided. Methods include monitoring of a halide ion, for example, based on a first analytical method such as conductivity with a compensation of the results for a main metal concentration such as a second analytical measurement of concentration of an iron triad metal (e.g., nickel (Ni)). From such measurements, a concentration of certain halide ions can be selectively determined.

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber.

Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern. Therefore, a residue is not remained when the mask pattern is removed to prevent a defect caused by the residue from being generated.

Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.

An electrode of a chemical cell includes a substrate having a surface, an array of conductive projections supported by the substrate and extending outward from the surface of the substrate, each conductive projection of the array of conductive projections having a semiconductor composition for reduction of carbon dioxide (CO.sub.2) in the chemical cell, and a catalyst arrangement disposed along each conductive projection of the array of conductive projections, the catalyst arrangement including a copper-based catalyst and an iron-based catalyst for the reduction of carbon dioxide (CO.sub.2) in the chemical cell.

A plating module includes: a plating tank, a substrate holder, and an elevating mechanism. The plating tank is for housing a plating solution. The substrate holder is for holding a substrate with a surface to be plated facing downward. The elevating mechanism is for moving up and down the substrate holder. The substrate holder includes: a supporting mechanism, a floating plate, a floating mechanism, and a pushing mechanism. The supporting mechanism is for supporting an outer peripheral portion of the surface of the substrate. The floating plate is arranged on a back surface side of the substrate. The floating mechanism is for biasing the floating plate to a direction away from a back surface of the substrate. The pushing mechanism is for pressing the floating plate to the back surface of the substrate against a biasing force to the substrate by the floating mechanism.