A method of forming a corrosion-resistant ceramic coating on a metallic substrate, the method comprising providing a passivation layer on a surface of the metallic substrate by electrochemical passivation of the metallic substrate under a first electrical current and using a first electrically conducting solution; and providing the corrosion-resistant ceramic coating on an outermost surface of the metallic substrate, the outermost surface in use adapted to be exposed to a corrosive environment, by plasma electrolytic oxidation of the metallic substrate with the passivation layer, in a second electrically conducting solution and under a second electrical current having a discharge voltage. The first and the second electrically conducting solutions comprise a tetrafluoroborate compound.

The present invention relates to a coating method for a plasma block and a plasma block coated by the same. The method comprises processing two sub-block capable of being coupled to each other for forming a flowing path; coating the flowing path of one sub-block by injecting an electrolytic solution the flowing path after displacing an electrode within the flowing path; coating an outer surface of one sub-block; and coating the other sub-block according to an same process for one sub-block.

A composition for selective anodization, comprising the substances amidosulphuric acid, magnesium sulphate and concentrated sulphuric acid as a base electrolyte and additionally sodium stannate and/or molybdenum oxide. A corresponding method of selectively anodizing a substrate or workpiece includes providing a substrate having a surface which is to be selectively coated, where the substrate is arranged in a tool and forms a coating cell, selectively bathing the surface with the composition for selective anodization, and applying an electric current between substrate (anode) and tool (cathode) for selective anodization of the surface.

An article made of a metal matrix composite material having particles bonded to an anodizable matrix material. The article can comprise an anodizable matrix material, particles bonded to the anodizable matrix material, a first anodic layer on at least a portion of the anodizable matrix material formed by anodizing, wherein the anodic layer includes a portion of the particles, at least one machined layer comprising portions of at least one of the anodizable matrix material, the anodic layer, and the particles, and a second anodic layer formed about the at least one machined layer and at least a partially removed portion of the first anodic layer. An article in preparation can include an anodizable matrix material, particles bonded to the anodizable matrix material, an anodic layer on the anodizable matrix material formed by anodizing, and at least one machined layer comprising portions of at least one of the anodizable matrix material, the anodic layer, and the particles.

The invention relates to a removable anodizing agent, in particular for local anodic oxidation of metal surfaces, and its use, and a method for anodic oxidation by means of an anodizing agent according to the invention.

This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

A bicycle gear having a first coating layer obtained by a plasma electrolytic oxidation treatment and a second coating layer, overlapped on the first coating layer, that is a lubricating substance, preferably a fluoropolymer.

A manufacturing method of a mold, the mold having at its surface a plurality of recessed portions whose two-dimensional size is not less than 10 nm and less than 500 nm when viewed in a direction normal to the surface, the method including: (a) providing a mold base, (b) partially anodizing an aluminum alloy layer, thereby forming a porous alumina layer which has a plurality of minute recessed portions; and (c) after step (b), bringing the porous alumina layer into contact with a first etching solution, thereby enlarging the plurality of minute recessed portions of the porous alumina layer. Step (a) of providing the mold base includes (a1) providing a metal base, (a2) forming an aluminum alloy layer on the metal base, and (a3) forming a surface protection layer on the aluminum alloy layer. Step (a2) and step (a3) are performed in a same chamber.

This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.