Provided is a film formation device and a film formation method for a metallic coating that allow forming a metallic coating with a uniform film thickness. The film formation device of the present disclosure includes an anode, a solid electrolyte membrane, a power supply device, a solution container, and a pressure device. The solid electrolyte membrane is disposed between the anode and a substrate that serves as a cathode. The power supply device applies a voltage between the anode and the cathode. The solution container contains a solution between the anode and the solid electrolyte membrane. The solution contains metal ions. The pressure device pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation device further includes a shielding member disposed to surround an outer peripheral surface of the anode. The shielding member shields a line of electric force.

An electrochemical deposition system having two or more electrochemical deposition modules arranged on a common platform and configured for depositing one or more metals on a substrate is described. Each electrochemical deposition module includes an anode compartment configured to contain a volume of anolyte fluid, a cathode compartment configured to contain a volume of catholyte fluid, and a membrane separating the anode compartment from the cathode compartment. Each electrochemical deposition module further includes a workpiece holder configured to hold opposing edges of a flexible workpiece between first and second leg members via a clamping mechanism, and a loader module configured to position the flexible workpiece in the workpiece holder while holding the flexible workpiece using an air cushion on each opposing planar surface of the flexible workpiece.

Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.

To improve uniformity of a plating film-thickness formed on a substrate.

A plating module 400 includes a plating tank 410 for housing a plating solution, a substrate holder 440 for holding a substrate Wf, an anode 430 housed within the plating tank 410, an anode mask 460 arranged between the substrate Wf held by the substrate holder 440 and the anode 430 and provided with an opening 466 in a center, and an ionically resistive element 450 arranged at an interval from the anode mask 460 between the substrate Wf held by the substrate holder 440 and the anode mask 460 and provided with a plurality of holes.

A film deposition device (1A) of a metal film includes: a solid electrolyte membrane (13) that allows metal ions to be contained; a positive electrode (11) made of a porous body; a power supply part (14) that applies a voltage between the positive electrode and a base material; and a contact pressurization part (20) that comes into contact with the positive electrode (11) and uniformly pressurizes a film deposition region of a surface of the base material by the solid electrolyte membrane (13) via the positive electrode (11). The positive electrode (11) made of the porous body is capable of transmitting a solution containing the metal ions such that the metal ions are supplied to the solid electrolyte membrane. The power supply part (14) applies a voltage between the positive electrode and the base material so that the metal film made of the metal is deposited.

A technique capable of preventing bubbles from being accumulated on a lower surface of an electric field shield plate is provided. A plating apparatus includes: a plating tank in which a plating solution is retained, and an anode is arranged: a substrate holder that is arranged above the anode, and holds a substrate serving as a cathode such that a surface to be plated of the substrate faces the anode; a diaphragm that partitions an inside of the plating tank into an anode region where the anode is arranged, and a cathode region where the substrate is arranged; and a supporting member that is in contact with a lower surface of the diaphragm and supports the diaphragm, and includes a plurality of beam components extending over regions between the anode and the substrate along the lower surface of the diaphragm, the beam components including bubble guide paths for guiding bubbles from the regions between the anode and the substrate to an outside.

An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

A method for manufacturing a wiring board in which the adhesion between an underlayer and a seed layer is improved. A diffusion layer in which an element forming the underlayer and an element forming a coating layer are mutually diffused is formed between the underlayer and a wiring portion of the coating layer by irradiating the wiring portion with a laser beam. A seed layer is formed by removing a portion excluding the wiring portion of the coating layer from the underlayer. A metal layer is formed by disposing a solid electrolyte membrane between an anode and the seed layer and applying voltage between the anode and the underlayer. An exposed portion without the seed layer of the underlayer is removed from an insulating substrate.

The present invention relates to a method of electrodepositing a metal on an electrically conductive particulate substrate. There is provided a method of electrodepositing a metal on an electrically conductive particulate substrate comprising the steps of: (i) providing a cathode; (ii) providing an anode formed from the metal to be electrodeposited; (iii) providing the substrate, cathode and anode within an electrodeposition bath comprising an electrolyte; and (iv) providing a voltage between said anode and cathode causing metal ions to flow from the anode to the cathode, wherein a separator is provided between the anode and the cathode.