According to one embodiment, an anodization apparatus includes: a first process tank configured to perform an anodization process on a substrate; a holder configured to hold the substrate; and a first electrolyte supply system configured to supply a first electrolyte to the first process tank. The holder immerses the substrate in the first electrolyte in a state where the substrate is inclined with respect to a liquid level of the first electrolyte. The anodization process is executed in a state where the substrate is inclined with respect to the liquid level of the first electrolyte.

A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode (3001); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P.sub.11 and continue with a period T.sub.11 (3002); step 3: when the period T.sub.11 ends, adjusting the first plating power supply applied on the first anode to output a power value P.sub.12 and continue with a period T.sub.12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P.sub.21 and continue with a period T.sub.21 (3003); and step 4: when the period T.sub.21 ends, adjusting the second plating power supply applied on the second anode to output a power value P.sub.22 and continue with a period T.sub.22; wherein step 2 to step 4 are performed periodically.

Provided is a technique that can suppress remaining of air bubbles on a lower surface of an electric field shielding plate. A plating apparatus 1000 include a plating tank 10, a substrate holder 30, and an electric field shielding plate 60 configured to be arranged in a portion between an anode 50 and a substrate Wf in an inside of the plating tank for shielding a part of an electric field formed between the anode and the substrate. In a top view of the electric field shielding plate, in the inside of the plating tank, an unshielded region 70 that is without shielded by the electric field shielding plate is disposed. An inclined surface is disposed in a lower surface 61a of the electric field shielding plate, the inclined surface is inclined with respect to a horizontal direction and is configured to release an air bubble existing on the lower surface thereof to the unshielded region.

A technique that ensures suppressing deterioration of a plating quality of a substrate caused by air bubbles accumulated on a lower surface of a membrane is provided. An air bubble removing method of a plating apparatus is an air bubble removing method for removing air bubble in an anode chamber 13 in a plating apparatus 1000 including a plating tank 10 and a substrate holder 30. The air bubble removing method includes: supplying a plating solution Ps from at least one supply port 70 disposed in an outer peripheral portion 12 of the anode chamber to the anode chamber and causing at least one discharge port 71 disposed in the outer peripheral portion of the anode chamber so as to face the supply port to suction the supplied plating solution to form a shear flow Sf of the plating solution along a lower surface on the lower surface 61a of a membrane 61 in the anode chamber.

A plating module includes a plating tank, a substrate holder, an elevating mechanism, an anode, an ionically resistive element, a supply pipe, and a bypass pipe. The substrate holder is for holding a substrate Wf with a surface to be plated Wf-a facing downward. The elevating mechanism is for moving up and down the substrate holder. The anode is disposed inside the plating tank so as to face the substrate Wf held by the substrate holder. The ionically resistive element is disposed between the anode and the substrate Wf. The supply pipe is for supplying a process liquid stored in a reservoir tank from a lower side of the ionically resistive element to the plating tank. The bypass pipe is for discharging the process liquid supplied to the plating tank via the supply pipe from the lower side of the ionically resistive element to the reservoir tank.

Tungsten-containing metal films may be deposited in recessed features of semiconductor substrates by electrodeposition. The tungsten-containing metal film is electrodeposited under conditions so that the tunsten-containing metal film is free or substantially free of oxide. Conditions are optimized during electrodeposition for pH, tungsten concentration, and current density, among other parameters. The tungsten-containing metal film may include cobalt tungsten alloy, cobalt nickel tungsten alloy, or nickel tungsten alloy, where a tungsten content in the tungsten-containing metal film is between about 1-20 atomic %.

An objective of the present invention is to prevent a prewetting liquid from remaining in an edge portion of a substrate. A plating method for subjecting a substrate to a plating treatment is provided, the substrate including a part to be plated that is exposed to a plating solution and an edge portion that is an outer region of the part to be plated. The plating method includes a first sealing step of bringing a first seal body into contact with the substrate to seal the edge portion of the substrate, a prewetting step of subjecting the sealed substrate to a prewetting treatment, a first seal removing step of removing the first seal body from the prewetted substrate, a substrate holding step of holding the substrate with a substrate holder including a second seal body, and a plating step of applying the plating solution to the substrate held by the substrate holder.

It is determined whether an imaginary component at a predetermined frequency of an alternating current impedance is equal to or more than a preliminarily set film-formable value or not. The metallic coating is formed in a state where the substrate is pressed by the solid electrolyte membrane when the imaginary component is equal to or more than the film-formable value in the determining. The metallic coating is formed in a state where the pressing of the substrate by the solid electrolyte membrane is released to separate the solid electrolyte membrane from the substrate, the solid electrolyte membrane is re-tensioned with a constant tensile force, and subsequently, the substrate is pressed by the re-tensioned solid electrolyte membrane when the imaginary component is smaller than the film-formable value in the determining.

Provided is a film formation device and a film formation method for a metallic coating that allow forming a metallic coating with a uniform film thickness. The film formation device of the present disclosure includes an anode, a solid electrolyte membrane, a power supply device, a solution container, and a pressure device. The solid electrolyte membrane is disposed between the anode and a substrate that serves as a cathode. The power supply device applies a voltage between the anode and the cathode. The solution container contains a solution between the anode and the solid electrolyte membrane. The solution contains metal ions. The pressure device pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation device further includes a shielding member disposed to surround an outer peripheral surface of the anode. The shielding member shields a line of electric force.

An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.