Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

The present invention improves the hydrophilicity of a substrate surface, and suppresses variation in the degree of hydrophilicity with each substrate. A plating apparatus is provided that performs a plating process on a substrate having a resist pattern. This plating apparatus includes a pretreatment bath that performs hydrophilic treatment by bringing a pretreatment liquid into contact with a surface to be plated of the substrate, and a plating bath that performs a plating process on a substrate that has undergone the hydrophilic treatment. The pretreatment bath includes a pretreatment liquid supplying device that supplies the pretreatment liquid into the pretreatment bath, and an ultraviolet light irradiation device that irradiates ultraviolet light onto the surface to be plated of the substrate.

A plating device comprises: a frame body shaped to surround a region to be plated on one principal surface of a substrate; a conveying unit that conveys the substrate to a position below the frame body while supporting the other principal surface of the substrate with the region to be plated faced up; a lifting unit that relatively lifts the substrate with respect to the frame body to form a storage space for storing a plating solution by the frame body and the region to be plated; a supply unit that supplies the plating solution to the storage space; a cathode electrode configured to be electrically connected to the region to be plated; and an anode electrode configured to be held in contact with the plating solution stored in the storage space.

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

A station for localized surface treatment of an industrial workpiece to be treated includes: at least one treatment chamber having a cell or two half-cells, each cell or half-cell delimiting a tight space between walls of the cell or half-cell and a respective portion or face of the industrial workpiece, the cell or each half-cell having a wall having an opening for covering a corresponding portion or face of the industrial workpiece, the opening of the cell or half-cell being delimited by a continuous sealing gasket, the cell or each half-cell including positioning means, the at least one treatment chamber having a supply and emptying circuit; and a plurality of storage vats each containing a treatment fluid, the supply and emptying circuit connecting each storage vat to the at least one treatment chamber so as to supply the at least one treatment chamber with respective treatment fluids.

There is provided a shielding plate that adjusts an electric potential distribution on a substrate near the substrate. According to one embodiment, there is provided a plating apparatus for performing a plating process on the substrate. The plating apparatus includes a substrate holder, the shielding plate, and a moving mechanism. The substrate holder holds the substrate. The shielding plate is disposed adjacent to the substrate holder. The moving mechanism moves the shielding plate in a direction of approaching the substrate holder and a direction away from the substrate holder. The shielding plate is moved to the substrate holder by the moving mechanism to be contactable with the substrate holder.

Systems for electroplating seal inspection may include a module configured to support a seal for inspection. The module may include a set of supports positioned to contact an interior rim of the seal. The module may be configured to rotate the seal about a central axis. The system may also include a detector positioned on the module. The detector may be positioned to scan an exterior surface of the seal.

An electroplating apparatus includes a substrate, a seed layer provided on a top surface of the substrate, a high-voltage portion provided on a bottom surface of the substrate, a housing sealing the high-voltage portion, an anode structure spaced apart from the seed layer in a direction perpendicular to the top surface of the substrate, first power source generating a first voltage difference between the seed layer and the anode structure, and a second power source applying a second voltage to the high-voltage portion. A positive terminal of the first power source is electrically connected to the anode structure, and a negative terminal of the first power source is electrically connected to the seed layer.

Provided is a metal film forming apparatus capable of forming a uniform metal film on a surface of a substrate by uniformly pressurizing an electrolyte membrane against the surface of the substrate. The film forming apparatus includes first and second film forming units, a coupling portion that couples the first and second film forming units together, a pressure device including a pressure unit that pressurizes substrates with electrolyte membranes of the respective film forming units via the coupling portion, and a power supply unit adapted to apply a voltage across each anode and each substrate. The film forming units are coupled to the coupling portion via their respective first elastic bodies that elastically deform in the pressurization direction of the pressure unit.

An apparatus for electrochemically processing a semiconductor substrate includes a processing chamber of the type that is sealable to a peripheral portion of a semiconductor substrate so as to define a covered processing volume. The semiconductor substrate is supported by a substrate support. A magnetic arrangement is disposed outside of the processing chamber and produces a magnetic field. The magnetic field is changed using a controller for controlling the magnetic arrangement. An agitator is disposed within the processing chamber. The agitator comprises a magnetically responsive element which is responsive to changes in the magnetic field of the magnetic arrangement so as to provide a reciprocating motion to the agitator.