Patent classifications
C25D17/004
FILM FORMING APPARATUS FOR FORMING METAL FILM AND FILM FORMING METHOD FOR FORMING METAL FILM
Provided is a film forming apparatus and a film forming method capable of forming a homogenous metal film by suppressing accumulation of an electrolytic solution between a solid electrolyte membrane and a substrate. A film forming apparatus for forming a metal film includes an anode; a solid electrolyte membrane disposed between the anode and a substrate; a power supply that applies a current between the anode and the substrate; a mount base including a housing recess according to a shape of the substrate that is housed therein; and a housing including a storing chamber that stores an electrolytic solution together with the anode and having the solid electrolyte membrane attached thereto to seal the storing chamber. The mount base includes a liquid discharge portion that discharges the electrolytic solution having passed through the solid electrolyte membrane from a position facing an end face of a side wall of the housing.
LIPSEALS AND CONTACT ELEMENTS FOR SEMICONDUCTOR ELECTROPLATING APPARATUSES
Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.
PLATING APPARATUS
Provided is a technique that ensures suppressed invasion of particles generated at a bearing of a rotation mechanism into a plating tank.
A plating apparatus 1000 includes a labyrinth seal member 50. The labyrinth seal member includes an inner labyrinth seal 53 arranged below a bearing 33 to seal the bearing, an outer labyrinth seal 54 arranged outside in a radial direction of the rotation shaft 32 with respect to the inner labyrinth seal, a delivery port 55configured to supply air to an inner seal space 60 formed inside in the radial direction with respect to the inner labyrinth seal, and a suction port 56 configured to suction air in an outer seal space 65 formed outside in the radial direction with respect to the inner labyrinth seal and inside in the radial direction with respect to the outer labyrinth seat
Apparatus for electrochemically processing semiconductor substrates
A method of processing a semiconductor wafer is provided. The method includes introducing the wafer to a main chamber via a loading port, using a transfer mechanism to transfer the wafer to a first wafer processing module in a stack so that the wafer is disposed substantially horizontally in the first wafer processing module with a front face facing upwards, and performing a processing step on the front face of the wafer in the first wafer processing module.
WORKPIECE HOLDER FOR A WET PROCESSING SYSTEM
Techniques herein provide a workpiece holder that can hold relatively flexible and thin workpieces for transport and electrochemical deposition while avoiding electroplating fluid wetting contacts or contact regions of a given workpiece. A workpiece holder frame holds a workpiece by gripping the workpiece on opposing sides of the workpiece. A flexure structure is used for clamping a given workpiece and for providing an electrical path for supplying a current to the workpiece. An elastomer covering provides sealing and insulation of the electrical flexure structure. The workpiece holder also provides tension to the workpiece to help hold the workpiece flat during processing. Each flexure structure can provide an independent electrical path to the workpiece surface.
Leak check method, leak check apparatus, plating method, and plating apparatus
A leak check method includes: performing a first inspection of measuring a pressure in an internal space formed by a seal of the substrate holder, while evacuating the internal space, and detecting that the pressure reaches a first pressure threshold value within a predetermined first inspection time; performing a second inspection of closing the internal space that has been evacuated, measuring the pressure in the closed internal space, and detecting that the pressure in the closed internal space does not exceed a second pressure threshold value within a predetermined second inspection time; and performing a third inspection of measuring a pressure difference between the pressure in the closed internal space and a vacuum pressure in a master container, and detecting that an amount of increase in the pressure difference within a predetermined third inspection time is kept equal to or below a pressure difference threshold value.
MECHANICALLY-DRIVEN OSCILLATING FLOW AGITATION
Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.
Substrate plating apparatus and substrate plating method
A substrate plating apparatus is disclosed. The apparatus includes a substrate holder; a plating bath configured to plate a surface of the substrate in a plating solution; a cleaning bath configured to clean the substrate holder and the substrate with a cleaning liquid; an inner shell disposed in the cleaning bath and configured to house the substrate holder holding the substrate therein; and a cleaning liquid supply conduit configured to supply a cleaning liquid into the inner shell to clean the substrate, together with the substrate holder, with the cleaning liquid. The inner shell has an inner surface having an uneven configuration that follows an uneven exterior configuration of the substrate holder holding the substrate.
PLATING APPARATUS, SUBSTRATE HOLDER, PLATING APPARATUS CONTROLLING METHOD, AND STORAGE MEDIUM CONFIGURED TO STORE PROGRAM FOR INSTRUCTING COMPUTER TO IMPLEMENT PLATING APPARATUS CONTROLLING METHOD
Provided is a plating apparatus for plating a substrate by using a substrate holder including an elastic projection that seals a to-be-plated surface of the substrate, the plating apparatus comprising a measurement device configured to measure a deformed state of the elastic projection by measuring at least either one of a compression amount of the elastic projection and load applied to the elastic projection at a time when the substrate physically contacts the elastic projection of the substrate holder; and a controlling device configured to make a judgment on the basis of the measured deformed state as to whether sealing by the elastic projection is normal.
PLATING APPARATUS HAVING CONDUCTIVE LIQUID AND PLATING METHOD
A plating apparatus may include a body, a lip seal structure connected to the body, and a conductive liquid. The body may include a cathode. The lip seal structure may be configured to hold a wafer. The lip seal structure may include a bottom portion, a contact portion connected to the bottom portion and contacting the wafer, and at least one partition structure protruding from an upper surface of the bottom portion. The conductive liquid may cover the upper surface of the bottom portion and may be configured to electrically connect the cathode and the wafer.