A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

A plating apparatus including a thief electrode that can be suitably maintained is provided. The plating apparatus includes a substrate holder holding a substrate, a thief electrode supporter supporting a thief electrode to be disposed outside the substrate, a plating tank configured to immerse the substrate in a plating solution for applying an electroplating treatment, a thief electrode maintenance tank configured to perform maintenance of the thief electrode, and a transport module configured to transport the thief electrode supporter to the plating tank and the thief electrode maintenance tank.

A plating apparatus including a thief electrode that can be suitably maintained is provided. The plating apparatus includes a substrate holder holding a substrate, a thief electrode supporter supporting a thief electrode to be disposed outside the substrate, a plating tank configured to immerse the substrate in a plating solution for applying an electroplating treatment, a thief electrode maintenance tank configured to perform maintenance of the thief electrode, and a transport module configured to transport the thief electrode supporter to the plating tank and the thief electrode maintenance tank.

A paddle for agitating a plating solution by reciprocating parallel to a surface of a substrate is disclosed. The paddle includes a plurality of vertically-extending agitation rods. Each agitation rod includes: a planar portion perpendicular to a reciprocating direction of the paddle; two slope surfaces extending from side ends of the planar portion in directions closer to each other, the two slope surfaces being symmetric with respect to a center line of the agitation rod, the center line being perpendicular to the planar portion; and a tip portion connected with the two slope surfaces.

A paddle for agitating a plating solution by reciprocating parallel to a surface of a substrate is disclosed. The paddle includes a plurality of vertically-extending agitation rods. Each agitation rod includes: a planar portion perpendicular to a reciprocating direction of the paddle; two slope surfaces extending from side ends of the planar portion in directions closer to each other, the two slope surfaces being symmetric with respect to a center line of the agitation rod, the center line being perpendicular to the planar portion; and a tip portion connected with the two slope surfaces.

Provided is a semiconductor manufacturing apparatus, comprising: a first device; one or more sensors that detect physical quantities indicating a state of the first device; a first calculation circuit that calculates one or more feature quantities of the first device from the detected physical quantities; and a failure prediction circuit that monitors a temporal change in the one or more feature quantities calculated in the first calculation circuit, and stops receiving a new substrate when a duration for which a degree of deviation of the one or more feature quantities from those at a normal time is increasing exceeds a first time, and/or when a number of increases and decreases per unit time in the degree of deviation of the one or more feature quantities from those at the normal time exceeds a first number.

Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.

Electroplating systems according to embodiments of the present technology may include a plating chamber configured to deposit metal material onto substrates positioned in the plating chamber. The plating chamber may include a rotor and a vessel. The electroplating systems may include at least one of baffle positioned in the plating chamber. The at least one baffle may define a plurality of slots. The at least one baffle may be configured to limit or prevent fluid from splashing the rotor or the plating chamber during operation of the plating chamber.

Electroplating systems according to embodiments of the present technology may include a plating chamber configured to deposit metal material onto substrates positioned in the plating chamber. The plating chamber may include a rotor and a vessel. The electroplating systems may include at least one of baffle positioned in the plating chamber. The at least one baffle may define a plurality of slots. The at least one baffle may be configured to limit or prevent fluid from splashing the rotor or the plating chamber during operation of the plating chamber.