There is disclosed an improved leak checking method which can accurately test a sealing performance of a substrate holder more than conventional leak check techniques. The leak checking method includes: holding a substrate with a substrate holder, the substrate holder including a first holding member and a second holding member, the second holding member having an opening through which a surface of the substrate is exposed; pressing a sealing projection of the second holding member against the surface of the substrate when holding the substrate with the substrate holder; covering the surface of the substrate, exposed through the opening, and the sealing projection with a sealing cap; forming a hermetic space between the sealing cap and the substrate holder; introducing a pressurized gas into the hermetic space; and detecting a decrease in pressure of the pressurized gas in the hermetic space.

The present disclosure illustrates a vertical electroplating module and an electroplating method for a fan-out panel level chip. The vertical electroplating module has an electroplating tank module, an exhaust tank module and a clamping module. A first box of the electroplating tank module has a first receiving chamber, a second receiving chamber and a third receiving chamber, the first receiving chamber is communicated with a bottom of the second receiving chamber, and a top of the second receiving chamber is communicated with the third receiving chamber. The exhaust tank module is communicated with the first receiving chamber and the third receiving chamber respectively via a first pump and a second pump. The clamping module is disposed around the opening on a wall of the second receiving chamber. The production made by the vertical electroplating module can meet a single-side production, without immersing the entire product in the chemical medicine.

The present disclosure illustrates a vertical electroplating module and an electroplating method for a fan-out panel level chip. The vertical electroplating module has an electroplating tank module, an exhaust tank module and a clamping module. A first box of the electroplating tank module has a first receiving chamber, a second receiving chamber and a third receiving chamber, the first receiving chamber is communicated with a bottom of the second receiving chamber, and a top of the second receiving chamber is communicated with the third receiving chamber. The exhaust tank module is communicated with the first receiving chamber and the third receiving chamber respectively via a first pump and a second pump. The clamping module is disposed around the opening on a wall of the second receiving chamber. The production made by the vertical electroplating module can meet a single-side production, without immersing the entire product in the chemical medicine.

Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

A surface treatment device includes at least one paddle in a plate shape, in a surface treatment tank, for stirring a surface treatment solution near an object to be plated by reciprocally moving the paddle with respect to the object to be plated. The paddle is configured by integrally forming multiple square bars provided in a depth direction or a horizontal direction of the surface treatment solution at regular intervals along the object to be plated. A liquid draining member for draining a liquid is arranged in at least one side of an end of the paddle.

A plating apparatus that reduces a terminal effect is provided. The plating apparatus is provided. The plating apparatus includes a substrate holder for holding a substrate as a plating object, an electric contact disposed on the substrate holder to apply a current to a substrate, and a plurality of anodes arranged to face the substrate holder. Each of the plurality of anodes has a long and thin shape. Each of the plurality of anodes is arranged such that a longitudinal direction of the anode is parallel to a surface of a substrate held onto the substrate holder and such that at least one end in the longitudinal direction of each of the anodes faces the electric contact of the substrate holder.

A plating apparatus that reduces a terminal effect is provided. The plating apparatus is provided. The plating apparatus includes a substrate holder for holding a substrate as a plating object, an electric contact disposed on the substrate holder to apply a current to a substrate, and a plurality of anodes arranged to face the substrate holder. Each of the plurality of anodes has a long and thin shape. Each of the plurality of anodes is arranged such that a longitudinal direction of the anode is parallel to a surface of a substrate held onto the substrate holder and such that at least one end in the longitudinal direction of each of the anodes faces the electric contact of the substrate holder.

An anode assembly allowing the anode to be easily pulled up from a plating tank is disclosed. The anode assembly includes: an anode structure; and an anode holder. The anode structure includes: an anode; and a feeding member. The anode holder includes: an anode support frame having a space in which the anode structure is arranged; a conductive bar; and a feeding electrode attached to an end of the conductive bar. One end of the feeding member is fixed to the anode, and the other end of the feeding member is detachably fixed to the conductive bar. The anode support frame has a positioning guide portion into which a lower end of the anode structure is inserted. The anode assembly is configured to allow the anode structure to be separated from the anode holder and pulled up from the plating tank when the feeding member is detached from the conductive bar.

A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer and a chemical tank that provides liquid to the processing station during a deposition process. The chemical tank may provide measurements of characteristics of the liquid to a controller. The controller may be configured to receive the measurements from the chemical tank; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness uniformity of the material is closer to a target thickness uniformity; and cause the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.