Provided is a technique that ensures suppressed deterioration of plating quality of a substrate due to a process gas that remains on a lower surface of a membrane. A plating apparatus 1000 includes a plating tank 10 and a substrate holder 30. The plating tank includes an anode 11 arranged in an anode chamber 13. The substrate holder is arranged above the anode chamber and configured to hold a substrate Wf as a cathode. The anode has a cylindrical shape extending in a vertical direction. The plating apparatus further includes a gas accumulation portion 60 and a discharge mechanism 70. The gas accumulation portion is disposed in the anode chamber so as to have a space between the anode and the gas accumulation portion. The gas accumulation portion covers an upper end, an outer peripheral surface, and an inner peripheral surface of the anode to accumulate a process gas generated from the anode. The discharge mechanism is configured to discharge the process gas accumulated in the gas accumulation portion to outside of the plating tank.

Provided is a technique that ensures suppressed deterioration of plating quality of a substrate due to a process gas that remains on a lower surface of a membrane. A plating apparatus 1000 includes a plating tank 10 and a substrate holder 30. The plating tank includes an anode 11 arranged in an anode chamber 13. The substrate holder is arranged above the anode chamber and configured to hold a substrate Wf as a cathode. The anode has a cylindrical shape extending in a vertical direction. The plating apparatus further includes a gas accumulation portion 60 and a discharge mechanism 70. The gas accumulation portion is disposed in the anode chamber so as to have a space between the anode and the gas accumulation portion. The gas accumulation portion covers an upper end, an outer peripheral surface, and an inner peripheral surface of the anode to accumulate a process gas generated from the anode. The discharge mechanism is configured to discharge the process gas accumulated in the gas accumulation portion to outside of the plating tank.

One object of the present disclosure is to provide a technique of suppressing deterioration of a seed layer of a substrate. There is provided a method of plating, comprising: a process of holding a substrate by a substrate holder, such that a sealed space is formed to protect a contact provided to supply electricity to the substrate, from a plating solution while the substrate holder holds the substrate, and that a contact location between the substrate and the contact is locally covered with a liquid in the sealed space; a process of soaking the substrate held by the substrate holder in the plating solution and placing the substrate to be opposed to an anode; and a process of performing a plating process of the substrate with supplying electric current between the substrate and the anode, in a state that the contact location between the substrate and the contact is covered with a liquid.

One object of the present disclosure is to provide a technique of suppressing deterioration of a seed layer of a substrate. There is provided a method of plating, comprising: a process of holding a substrate by a substrate holder, such that a sealed space is formed to protect a contact provided to supply electricity to the substrate, from a plating solution while the substrate holder holds the substrate, and that a contact location between the substrate and the contact is locally covered with a liquid in the sealed space; a process of soaking the substrate held by the substrate holder in the plating solution and placing the substrate to be opposed to an anode; and a process of performing a plating process of the substrate with supplying electric current between the substrate and the anode, in a state that the contact location between the substrate and the contact is covered with a liquid.

A device for performing anodizing treatment on a part, the device including a treatment chamber including a part for anodizing together with a counter-electrode situated facing the part to be treated, the part to be treated constituting a first wall of the treatment chamber; a generator, a first terminal of the generator being electrically connected to the part to be treated and a second terminal of the generator being electrically connected to the counter-electrode; and a system for storing and circulating an electrolyte, the system including a storage vessel, different from the treatment chamber, for containing the electrolyte; and a circuit for circulating the electrolyte in order to enable the electrolyte to flow between the storage vessel and the treatment chamber.

A plating apparatus includes a plating bath storing a plating solution and plating targets, and an injector in the plating bath. The injector includes a first injection port to inject the plating solution. The plating targets included in the plating solution are stirred by the plating solution injected from the injector. A mesh portion is provided at the first injection port. The mesh portion is defined by at least two stacked meshes. The mesh portion includes a central portion and a circumferential portion provided outside the central portion when viewed in a planar direction. The circumferential portion is defined by one layer of the mesh or a plurality of layers of the mesh. The central portion is defined by a plurality of layers of the mesh. A number of layers of the mesh in the central portion is greater than that of the circumferential portion.

A plating apparatus includes a plating bath storing a plating solution and plating targets, and an injector in the plating bath. The injector includes a first injection port to inject the plating solution. The plating targets included in the plating solution are stirred by the plating solution injected from the injector. A mesh portion is provided at the first injection port. The mesh portion is defined by at least two stacked meshes. The mesh portion includes a central portion and a circumferential portion provided outside the central portion when viewed in a planar direction. The circumferential portion is defined by one layer of the mesh or a plurality of layers of the mesh. The central portion is defined by a plurality of layers of the mesh. A number of layers of the mesh in the central portion is greater than that of the circumferential portion.

An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

A substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and configured to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon the switching, a flow rate of the processing liquid flowing therethrough changes with time.

A substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and configured to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon the switching, a flow rate of the processing liquid flowing therethrough changes with time.