A semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece, wherein the outlet of the conduit is positioned above the major surface of the semiconductor workpiece by a vertical distance.

A semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece, wherein the outlet of the conduit is positioned above the major surface of the semiconductor workpiece by a vertical distance.

The present disclosure generally relates to methods of electro-depositing a crystalline layer of pure aluminum onto the surface of an aluminum alloy article. The methods may include positioning the article and an electrode in an electro-deposition solution. The electro-deposition solution includes one or more of an aluminum halide, an organic chloride salt, an aluminum reducing agent, a solvent such as a nitrile compound, and an alkali metal halide. The solution is blanketed with an inert gas, agitated, and a crystalline layer of aluminum is deposited on the article by applying a bias voltage to the article and the electrode.

The present disclosure generally relates to methods of electro-depositing a crystalline layer of pure aluminum onto the surface of an aluminum alloy article. The methods may include positioning the article and an electrode in an electro-deposition solution. The electro-deposition solution includes one or more of an aluminum halide, an organic chloride salt, an aluminum reducing agent, a solvent such as a nitrile compound, and an alkali metal halide. The solution is blanketed with an inert gas, agitated, and a crystalline layer of aluminum is deposited on the article by applying a bias voltage to the article and the electrode.

A plating apparatus and an operation method thereof are provided. The plating apparatus includes: a tank body including at least one side wall, the at least one side wall being provided with an opening extending from the inside to the outside of the tank body, and the tank body being configured to accommodate a plating solution; and a fixing device configured to fix the substrate at the opening of the side wall. The operation method of the plating apparatus includes: placing the substrate on an outer side of the side wall and at the position of the opening, and operating the fixing device to fix the substrate; and performing plating treatment on the substrate.

A plating apparatus and an operation method thereof are provided. The plating apparatus includes: a tank body including at least one side wall, the at least one side wall being provided with an opening extending from the inside to the outside of the tank body, and the tank body being configured to accommodate a plating solution; and a fixing device configured to fix the substrate at the opening of the side wall. The operation method of the plating apparatus includes: placing the substrate on an outer side of the side wall and at the position of the opening, and operating the fixing device to fix the substrate; and performing plating treatment on the substrate.

Provided is a method for manufacturing a wiring board that forms a wiring layer having favorable adhesion without a resin resist pattern. A method prepares a substrate with seed-layer including: a underlayer on the surface of an insulating substrate; and a seed layer on the surface of the underlayer, the seed layer having a predetermined pattern and containing metal; presses a solid electrolyte membrane against the seed layer and the underlayer, and applies voltage between an anode and the underlayer to reduce metal ions in the membrane and form a metal layer on the surface of the seed layer; and removes an exposed region without the seed layer and the metal layer of the underlayer to form a wiring layer including the underlayer, the seed layer and the metal layer on the surface of the substrate.

In a plasma electrolytic oxidation apparatus and a method of plasma electrolytic oxidation using the plasma electrolytic oxidation apparatus, the plasma electrolytic oxidation apparatus includes a chamber and an electrode unit. The chamber is configured to receive an electrolyte. The electrode unit is configured to receive the electrolyte from the chamber and to treat an object with a plasma electrolytic oxidation treatment. The electrode unit includes an electrode, an enclosing part and a cover. The electrode is configured to receive a voltage from outside, and to form a receiving space in which the electrolyte is received between the electrode and the object. The enclosing part is configured to enclose a gap between the electrode and the object. The cover is configured to cover the electrode.

In a plasma electrolytic oxidation apparatus and a method of plasma electrolytic oxidation using the plasma electrolytic oxidation apparatus, the plasma electrolytic oxidation apparatus includes a chamber and an electrode unit. The chamber is configured to receive an electrolyte. The electrode unit is configured to receive the electrolyte from the chamber and to treat an object with a plasma electrolytic oxidation treatment. The electrode unit includes an electrode, an enclosing part and a cover. The electrode is configured to receive a voltage from outside, and to form a receiving space in which the electrolyte is received between the electrode and the object. The enclosing part is configured to enclose a gap between the electrode and the object. The cover is configured to cover the electrode.

One object of the present disclosure is to flexibly and promptly save a processing solution in an apparatus for processing a substrate. An apparatus for processing a substrate is configured to change over a transfer time table between an ordinary mode that has a maximum throughput of the apparatus for processing the substrate and a processing solution saving mode that saves a processing solution in at least one of processing tanks. The apparatus for processing the substrate determines whether or not the apparatus for processing the substrate is in a slack period that has a small demand output by the apparatus for processing the substrate, based on a rate-controlling point that limits a processing speed of the entire apparatus for processing the substrate, and sets the transfer time table to the processing solution saving mode when it is determined that the apparatus for processing the substrate is in the slack period, while setting the transfer time table to the ordinary mode when it is determined that the apparatus for processing the substrate is not in the slack period.