For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.

For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.

The embodiments herein relate to methods and apparatus for detecting whether unwanted metallic deposits are present on a bottom of a substrate holder used in an electroplating apparatus. The presence of such unwanted deposits is harmful to electroplating processes because the deposits scavenge current that is intended to cause electroplating on a substrate. When such current scavenging occurs, the electroplating results on the substrates are poor. For instance, features positioned near the edge of a substrate are likely to plate to an insufficient thickness. Further, where such current scavenging is great, the overall thickness of the material plated on the substrate may be too thin. As such, there is a need to detect when such unwanted deposits are present, such that plating under these poor conditions may be avoided. This detection will help preserve costly wafers.

Methods and apparatus for forming porous silicon layers are provided. In some embodiments, an anodizing bath includes: a housing having a first volume to hold a chemical solution; a cathode disposed within the first volume at a first side of the housing; an anode disposed within the first volume at a second side of the housing, opposite the first side, wherein a face of each of the cathode and the anode have a given surface area; a substrate holder configured to retain a plurality of substrates along a perimeter thereof within the first volume in a plurality of substrate holding positions, a plurality of vent openings fluidly coupled to the first volume to release process gases, wherein a top of each of the plurality of vent openings are disposed above a chemical solution fill level in the first volume.

Methods and apparatus for forming porous silicon layers are provided. In some embodiments, an anodizing bath includes: a housing having a first volume to hold a chemical solution; a cathode disposed within the first volume at a first side of the housing; an anode disposed within the first volume at a second side of the housing, opposite the first side, wherein a face of each of the cathode and the anode have a given surface area; a substrate holder configured to retain a plurality of substrates along a perimeter thereof within the first volume in a plurality of substrate holding positions, a plurality of vent openings fluidly coupled to the first volume to release process gases, wherein a top of each of the plurality of vent openings are disposed above a chemical solution fill level in the first volume.

An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

A leak check method includes: performing a first inspection of measuring a pressure in an internal space formed by a seal of the substrate holder, while evacuating the internal space, and detecting that the pressure reaches a first pressure threshold value within a predetermined first inspection time; performing a second inspection of closing the internal space that has been evacuated, measuring the pressure in the closed internal space, and detecting that the pressure in the closed internal space does not exceed a second pressure threshold value within a predetermined second inspection time; and performing a third inspection of measuring a pressure difference between the pressure in the closed internal space and a vacuum pressure in a master container, and detecting that an amount of increase in the pressure difference within a predetermined third inspection time is kept equal to or below a pressure difference threshold value.

A leak check method includes: performing a first inspection of measuring a pressure in an internal space formed by a seal of the substrate holder, while evacuating the internal space, and detecting that the pressure reaches a first pressure threshold value within a predetermined first inspection time; performing a second inspection of closing the internal space that has been evacuated, measuring the pressure in the closed internal space, and detecting that the pressure in the closed internal space does not exceed a second pressure threshold value within a predetermined second inspection time; and performing a third inspection of measuring a pressure difference between the pressure in the closed internal space and a vacuum pressure in a master container, and detecting that an amount of increase in the pressure difference within a predetermined third inspection time is kept equal to or below a pressure difference threshold value.

An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.