There is provided the substrate holder for holding a substrate comprising a first holding member, a second holding member, a sealing member, a pin, a ring, and a moving mechanism. The sealing member forms a sealed space inside the substrate holder. The pin is fixed to one of the first holding member and the second holding member. The ring is disposed on another of the first holding member and the second holding member. The ring engages with the pin. The moving mechanism circumferentially moves the ring. The pin and the ring are engaged with one another to fix the first holding member and the second holding member to one another. The pin and the ring are disposed inside the sealed space.

There is provided the substrate holder for holding a substrate comprising a first holding member, a second holding member, a sealing member, a pin, a ring, and a moving mechanism. The sealing member forms a sealed space inside the substrate holder. The pin is fixed to one of the first holding member and the second holding member. The ring is disposed on another of the first holding member and the second holding member. The ring engages with the pin. The moving mechanism circumferentially moves the ring. The pin and the ring are engaged with one another to fix the first holding member and the second holding member to one another. The pin and the ring are disposed inside the sealed space.

Provided is a method for forming a metal film using a solid-state electrolyte membrane, and the method allows a metal film having a smooth surface to be formed and an additive to sufficiently serve its function. A method for forming a metal film includes the successive steps of (a) supplying a solution to a solution-housing space, the solution containing ions of the metal and an additive; (b) increasing a pressure of the solution in the solution-housing space in a state where the solution-housing space is uncommunicated with a solution tank and the substrate held by a holder is in contact with the solid-state electrolyte membrane; (c) decreasing the pressure of the solution in the solution-housing space; and (d) forming the film of the metal on the substrate by applying a voltage between an anode and the substrate while the solution is circulated between the solution-housing space and the solution tank.

Provided is a method for forming a metal film using a solid-state electrolyte membrane, and the method allows a metal film having a smooth surface to be formed and an additive to sufficiently serve its function. A method for forming a metal film includes the successive steps of (a) supplying a solution to a solution-housing space, the solution containing ions of the metal and an additive; (b) increasing a pressure of the solution in the solution-housing space in a state where the solution-housing space is uncommunicated with a solution tank and the substrate held by a holder is in contact with the solid-state electrolyte membrane; (c) decreasing the pressure of the solution in the solution-housing space; and (d) forming the film of the metal on the substrate by applying a voltage between an anode and the substrate while the solution is circulated between the solution-housing space and the solution tank.

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

Provided is a plating apparatus and a plating solution agitating method that can agitate a plating solution without using a paddle.

A plating apparatus 1000 includes a holder cover 50 disposed in a substrate holder 30 and configured to rotate with the substrate holder when the substrate holder rotates. The holder cover is configured to have a lower surface immersed in the plating solution with the lower surface positioned below a surface to be plated of a substrate. The lower surface of the holder cover is provided with at least one cover groove extending in a direction intersecting with a rotation direction of the holder cover.

Provided is a plating apparatus and a plating solution agitating method that can agitate a plating solution without using a paddle.

A plating apparatus 1000 includes a holder cover 50 disposed in a substrate holder 30 and configured to rotate with the substrate holder when the substrate holder rotates. The holder cover is configured to have a lower surface immersed in the plating solution with the lower surface positioned below a surface to be plated of a substrate. The lower surface of the holder cover is provided with at least one cover groove extending in a direction intersecting with a rotation direction of the holder cover.

A plating module 400 includes a plating tank 410, a substrate holder 440, an elevating mechanism 480, and a moving mechanism 490. The plating tank 410 is for housing a plating solution. The substrate holder 440 is for holding a substrate Wf with a surface to be plated Wf-a facing the plating solution housed in the plating tank 410. The elevating mechanism 480 is for elevating the substrate holder 440. The moving mechanism 490 is for moving the substrate holder 440 in a direction perpendicular to an elevating direction of the substrate holder 440.

A plating module 400 includes a plating tank 410, a substrate holder 440, an elevating mechanism 480, and a moving mechanism 490. The plating tank 410 is for housing a plating solution. The substrate holder 440 is for holding a substrate Wf with a surface to be plated Wf-a facing the plating solution housed in the plating tank 410. The elevating mechanism 480 is for elevating the substrate holder 440. The moving mechanism 490 is for moving the substrate holder 440 in a direction perpendicular to an elevating direction of the substrate holder 440.