Disclosed herein are systems and methods for electroplating nickel which employ substantially sulfur-free nickel anodes. The methods may include placing a semiconductor substrate in a cathode chamber of an electroplating cell having an anode chamber containing a substantially sulfur-free nickel anode, contacting an electrolyte solution having reduced oxygen concentration with the substantially sulfur-free nickel anode contained in the anode chamber, and electroplating nickel from the electrolyte solution onto the semiconductor substrate placed in the cathode chamber. The electroplating systems may include an electroplating cell having an anode chamber configured for holding a substantially sulfur-free nickel anode, a cathode chamber, and a substrate holder within the cathode chamber configured for holding a semiconductor substrate. The systems may also include an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber.

Disclosed herein are systems and methods for electroplating nickel which employ substantially sulfur-free nickel anodes. The methods may include placing a semiconductor substrate in a cathode chamber of an electroplating cell having an anode chamber containing a substantially sulfur-free nickel anode, contacting an electrolyte solution having reduced oxygen concentration with the substantially sulfur-free nickel anode contained in the anode chamber, and electroplating nickel from the electrolyte solution onto the semiconductor substrate placed in the cathode chamber. The electroplating systems may include an electroplating cell having an anode chamber configured for holding a substantially sulfur-free nickel anode, a cathode chamber, and a substrate holder within the cathode chamber configured for holding a semiconductor substrate. The systems may also include an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber.

An apparatus for forming an electrode film mixture can have a first source including a polymer dispersion comprising a liquid and a polymer, a second source including a second component of the electrode film mixture, and a fluidized bed coating apparatus including a first inlet configured to receive from the first source the dispersion, and a second inlet configured to receive from the second source the second component.

An apparatus for forming an electrode film mixture can have a first source including a polymer dispersion comprising a liquid and a polymer, a second source including a second component of the electrode film mixture, and a fluidized bed coating apparatus including a first inlet configured to receive from the first source the dispersion, and a second inlet configured to receive from the second source the second component.

An Sn alloy plating apparatus is disclosed. The apparatus includes a plating bath configured to store an Sn alloy plating solution therein with an insoluble anode and a substrate immersed in the Sn alloy plating solution, an Sn dissolving having an anion exchange membrane therein which isolates an anode chamber, in which an Sn anode is disposed, and a cathode chamber, in which a cathode is disposed, from each other, a pure water supply structure configured to supply pure water to the anode chamber and the cathode chamber, a methanesulfonic acid solution supply structure configured to supply a methanesulfonic acid solution, containing a methanesulfonic acid, to the anode chamber and the cathode chamber, and an Sn replenisher supply structure configured to supply an Sn replenisher, produced in the anode chamber and containing Sn ions and a methanesulfonic acid, to the plating bath.

An Sn alloy plating apparatus is disclosed. The apparatus includes a plating bath configured to store an Sn alloy plating solution therein with an insoluble anode and a substrate immersed in the Sn alloy plating solution, an Sn dissolving having an anion exchange membrane therein which isolates an anode chamber, in which an Sn anode is disposed, and a cathode chamber, in which a cathode is disposed, from each other, a pure water supply structure configured to supply pure water to the anode chamber and the cathode chamber, a methanesulfonic acid solution supply structure configured to supply a methanesulfonic acid solution, containing a methanesulfonic acid, to the anode chamber and the cathode chamber, and an Sn replenisher supply structure configured to supply an Sn replenisher, produced in the anode chamber and containing Sn ions and a methanesulfonic acid, to the plating bath.

A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

A metal plating apparatus includes a chemical bath chamber, an anode disposed at a bottom portion of the chemical bath chamber, and a cathode disposed at a top portion of the chemical bath chamber. A solenoid coil is disposed within the chemical bath chamber between the anode and the cathode. The solenoid coil is arranged to apply a magnetic field during a metal plating process in a direction from the anode to the cathode.

A metal plating apparatus includes a chemical bath chamber, an anode disposed at a bottom portion of the chemical bath chamber, and a cathode disposed at a top portion of the chemical bath chamber. A solenoid coil is disposed within the chemical bath chamber between the anode and the cathode. The solenoid coil is arranged to apply a magnetic field during a metal plating process in a direction from the anode to the cathode.