Examples of a susceptor for supporting a substrate includes a base metal formed of aluminum or a material containing aluminum, an anodized layer covering a surface of the base metal and having cracks therein, and a CF coating of polymer provided in the cracks such that the exposure of the base metal is avoided.

Examples of a susceptor for supporting a substrate includes a base metal formed of aluminum or a material containing aluminum, an anodized layer covering a surface of the base metal and having cracks therein, and a CF coating of polymer provided in the cracks such that the exposure of the base metal is avoided.

A method includes: agitating base members that has been immersed in an electrolytic solution inside of an electroplating tank so as to flow in a circumference direction along an inner wall of the electroplating tank; and electroplating the base members flowing along the circumference direction in the electrolytic solution inside of the electroplating tank. The flow of the base members along the circumference direction is caused by a flow of magnetic media along the circumference direction in the electrolytic solution inside of the electroplating tank or is caused by rotation of an agitation unit provided at a bottom side of the electroplating tank. At least one of the base members touches a bottom cathode, and a base member positioned upward relative to the base member touching the bottom cathode is electrically connected to the bottom cathode via at least the base member touching the bottom cathode.

A method includes: agitating base members that has been immersed in an electrolytic solution inside of an electroplating tank so as to flow in a circumference direction along an inner wall of the electroplating tank; and electroplating the base members flowing along the circumference direction in the electrolytic solution inside of the electroplating tank. The flow of the base members along the circumference direction is caused by a flow of magnetic media along the circumference direction in the electrolytic solution inside of the electroplating tank or is caused by rotation of an agitation unit provided at a bottom side of the electroplating tank. At least one of the base members touches a bottom cathode, and a base member positioned upward relative to the base member touching the bottom cathode is electrically connected to the bottom cathode via at least the base member touching the bottom cathode.

An electroplated article includes a base member that includes one or more base member-metallic elements; and an electroplated layer that is formed directly on the base member. The electroplated layer includes at least a first electroplated layer-metallic element and a second electroplated layer-metallic element that is different from the first electroplated layer-metallic element. The second electroplated layer-metallic element is a metallic element that is identical to at least one of the one or more base member-metallic elements. A ratio of the second electroplated layer-metallic element in the electroplated layer is continuously decreased as being away from the base member in the thickness direction of the electroplated layer. Alloy grains including at least the first and second electroplated layer-metallic elements are distributed in the electroplated layer such that a clear interface is not formed between the base member and the electroplated layer.

An electroplated article includes a base member that includes one or more base member-metallic elements; and an electroplated layer that is formed directly on the base member. The electroplated layer includes at least a first electroplated layer-metallic element and a second electroplated layer-metallic element that is different from the first electroplated layer-metallic element. The second electroplated layer-metallic element is a metallic element that is identical to at least one of the one or more base member-metallic elements. A ratio of the second electroplated layer-metallic element in the electroplated layer is continuously decreased as being away from the base member in the thickness direction of the electroplated layer. Alloy grains including at least the first and second electroplated layer-metallic elements are distributed in the electroplated layer such that a clear interface is not formed between the base member and the electroplated layer.

According to an embodiment, a method of processing a material for a catalyst includes establishing an electrical potential on a porous electrode. Core particles are directed through the porous electrode. A layer of metal is deposited on the core particles as the particles pass through the porous electrode. According to an embodiment, an example assembly for processing a material for a catalyst includes a housing that establishes a path for particles to move through the housing. A porous electrode is situated within the housing for permitting core particles to move through the porous electrode. A layer of metal can be deposited on the core particles as the particles pass through the porous electrode.

Disclosed herein are methods for electroplating which employ seed layer detection. Such methods may operate by selecting a wafer, illuminating one or more points within an interior region of the wafer surface, measuring a first set of one or more in-process color signals from the one or more points within the interior region, illuminating one or more points within an edge region of the wafer surface, measuring a second set of one or more in-process color signals from the one or more points within the edge region, each color signal having one or more color components, calculating a metric indicative of a difference between the color signals in the first and second sets of in-process color signals, determining whether an acceptable seed layer is present on the wafer based on whether the metric is within a predetermined range, and repeating the foregoing for one or more additional wafers.

Disclosed herein are methods for electroplating which employ seed layer detection. Such methods may operate by selecting a wafer, illuminating one or more points within an interior region of the wafer surface, measuring a first set of one or more in-process color signals from the one or more points within the interior region, illuminating one or more points within an edge region of the wafer surface, measuring a second set of one or more in-process color signals from the one or more points within the edge region, each color signal having one or more color components, calculating a metric indicative of a difference between the color signals in the first and second sets of in-process color signals, determining whether an acceptable seed layer is present on the wafer based on whether the metric is within a predetermined range, and repeating the foregoing for one or more additional wafers.

Disclosed herein are methods for electroplating which employ seed layer detection. Such methods may operate by selecting a wafer, illuminating one or more points within an interior region of the wafer surface, measuring a first set of one or more in-process color signals from the one or more points within the interior region, illuminating one or more points within an edge region of the wafer surface, measuring a second set of one or more in-process color signals from the one or more points within the edge region, each color signal having one or more color components, calculating a metric indicative of a difference between the color signals in the first and second sets of in-process color signals, determining whether an acceptable seed layer is present on the wafer based on whether the metric is within a predetermined range, and repeating the foregoing for one or more additional wafers.