Patent classifications
C25D21/02
FILM FORMATION APPARATUS AND FILM FORMATION METHOD FOR FORMING METAL FILM
A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.
FILM FORMATION APPARATUS AND FILM FORMATION METHOD FOR FORMING METAL FILM
A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.
Plating apparatus and plating method
The present invention relates to a plating apparatus and a plating method for partially forming a plating film on an object to be plated. The plating apparatus includes: a rotary electrode configured to be rotatable; a plating solution holding unit arranged to the rotary electrode and configured to hold a plating solution; and a power supply unit configured to apply a voltage between the portion to be plated and the rotary electrode.
INSULATING FILM-ATTACHED PUNCHED WORKPIECE AND METHOD FOR PRODUCING SAME
This punched-workpiece with the insulating film includes a punched-workpiece having a cut surface, a plating layer formed on at least the cut surface of the punched-workpiece, and an insulating film formed on the surface of the plating layer.
Mandrel for electroforming
An apparatus and method for a mandrel used during an electroforming process. The mandrel is formed of a structural wax and includes a metallic layer utilized to formulate a metal component. During the electroforming process, the mandrel is actively cooled utilizing a closed loop. The closed loop includes the mandrel and a heat exchanger through which a coolant flows.
Mandrel for electroforming
An apparatus and method for a mandrel used during an electroforming process. The mandrel is formed of a structural wax and includes a metallic layer utilized to formulate a metal component. During the electroforming process, the mandrel is actively cooled utilizing a closed loop. The closed loop includes the mandrel and a heat exchanger through which a coolant flows.
Component of substrate processing apparatus and method for forming a film thereon
A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.
Component of substrate processing apparatus and method for forming a film thereon
A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.
ELECTROCHEMICAL DEPOSITION SYSTEMS WITH ENHANCED CRYSTALLIZATION PREVENTION FEATURES
Electrochemical deposition systems and methods are described that have enhanced crystallization prevention features. The systems may include a bath vessel operable to hold an electrochemical deposition fluid having a metal salt dissolved in water. The systems may also include sensors including a thermometer and concentration sensor operable to measure characteristics of the electrochemical deposition fluid. The systems further include a computer configured to perform operations that include receiving system data from the electrochemical system and generating a control signal to change a characteristic of the electrochemical deposition fluid to prevent crystallization of a metal salt in the fluid. The computer generates the control signal based on processing that may include comparing an actual metal salt concentration in the electrochemical deposition fluid to a theoretical solubility limit for the metal salt in the fluid.
ELECTROCHEMICAL DEPOSITION SYSTEMS WITH ENHANCED CRYSTALLIZATION PREVENTION FEATURES
Electrochemical deposition systems and methods are described that have enhanced crystallization prevention features. The systems may include a bath vessel operable to hold an electrochemical deposition fluid having a metal salt dissolved in water. The systems may also include sensors including a thermometer and concentration sensor operable to measure characteristics of the electrochemical deposition fluid. The systems further include a computer configured to perform operations that include receiving system data from the electrochemical system and generating a control signal to change a characteristic of the electrochemical deposition fluid to prevent crystallization of a metal salt in the fluid. The computer generates the control signal based on processing that may include comparing an actual metal salt concentration in the electrochemical deposition fluid to a theoretical solubility limit for the metal salt in the fluid.