A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

A semiconductor package, a redistribution structure and a method for forming the same are provided. The redistribution structure for coupling an encapsulated die is provided, the redistribution structure includes a conductive pattern disposed over and electrically coupled to the encapsulated die. The conductive pattern extends beyond an edge of the encapsulated die along a first extending direction which intersects a second extending direction of the edge of the encapsulated die by an angle in a top view, and an impurity concentration of sulfur in the conductive pattern is less than about 0.1 ppm.

A semiconductor package, a redistribution structure and a method for forming the same are provided. The redistribution structure for coupling an encapsulated die is provided, the redistribution structure includes a conductive pattern disposed over and electrically coupled to the encapsulated die. The conductive pattern extends beyond an edge of the encapsulated die along a first extending direction which intersects a second extending direction of the edge of the encapsulated die by an angle in a top view, and an impurity concentration of sulfur in the conductive pattern is less than about 0.1 ppm.

A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.

A leak check method includes: performing a first inspection of measuring a pressure in an internal space formed by a seal of the substrate holder, while evacuating the internal space, and detecting that the pressure reaches a first pressure threshold value within a predetermined first inspection time; performing a second inspection of closing the internal space that has been evacuated, measuring the pressure in the closed internal space, and detecting that the pressure in the closed internal space does not exceed a second pressure threshold value within a predetermined second inspection time; and performing a third inspection of measuring a pressure difference between the pressure in the closed internal space and a vacuum pressure in a master container, and detecting that an amount of increase in the pressure difference within a predetermined third inspection time is kept equal to or below a pressure difference threshold value.

According to one embodiment, an anodization apparatus includes: a first process tank configured to perform an anodization process on a substrate; a holder configured to hold the substrate; and a first electrolyte supply system configured to supply a first electrolyte to the first process tank. The holder immerses the substrate in the first electrolyte in a state where the substrate is inclined with respect to a liquid level of the first electrolyte. The anodization process is executed in a state where the substrate is inclined with respect to the liquid level of the first electrolyte.

A semiconductor manufacturing apparatus including: a first device; one or more sensors; a first calculation circuit that calculates one or more feature quantities of the first device from the detected physical quantities; and a failure prediction circuit that compares the one or more feature quantities with a plurality of pieces of model data of a temporal change in one or more feature quantities until the first device fails, decides a piece of model data with the minimum difference from the calculated one or more feature quantities among the plurality of pieces of model data, calculates predicted failure time from a difference between a failure point in time and a point in time at which a difference from the calculated one or more feature quantities is the minimum in the piece of model data.

Disclosed are a device and a method for microelectrodeposition through a laser assisted flexible following tool electrode. Localization of electrodeposition and dimensional precision of members are enhanced by using the flexible following tool electrode to restrict a dispersion region of an electric field and a reaction region of electrodeposition, and a complex-shaped member can be deposited by controlling a motion path of the flexible following tool electrode. Since a laser has a high power density, introducing laser irradiation changes an electrode state in a radiated region, accelerates ion diffusion and electron transfer speeds, and increases a deposition rate, thus reducing defects such as pitting and cracking in a deposit, enhancing deposition quality, and achieving fabrication of a micro-part by a synergistic action of both electrochemical energy and laser energy.

Disclosed are a device and a method for microelectrodeposition through a laser assisted flexible following tool electrode. Localization of electrodeposition and dimensional precision of members are enhanced by using the flexible following tool electrode to restrict a dispersion region of an electric field and a reaction region of electrodeposition, and a complex-shaped member can be deposited by controlling a motion path of the flexible following tool electrode. Since a laser has a high power density, introducing laser irradiation changes an electrode state in a radiated region, accelerates ion diffusion and electron transfer speeds, and increases a deposition rate, thus reducing defects such as pitting and cracking in a deposit, enhancing deposition quality, and achieving fabrication of a micro-part by a synergistic action of both electrochemical energy and laser energy.

An example electroplating method comprises feeding fresh electrolyte solution into a bath reservoir via a first inlet of the bath reservoir, and bleeding used electrolyte solution out of the bath reservoir via first outlet of the bath reservoir. Recycled electrolyte solution is received into the bath reservoir via a second inlet of the bath reservoir, and electrolyte solution is discharged from the bath reservoir via a second outlet of the bath reservoir. By-products generated by a plating cell are extracted using an extraction column. A first particle filter is disposed in a fluid pathway between the second outlet of the bath reservoir and the inlet of the plating cell, and a second particle filter is disposed in a fluid pathway between the outlet of the extraction column and the second inlet of the bath reservoir. Flow control means are disposed between the plating cell and the bath reservoir and selectively return a portion of the electrolyte solution to the bath reservoir without passing the returned portion through the first or second filter.