Patent classifications
C25D21/12
Substrate holding device
Provided is a substrate holding device that inhibits drop in holding accuracy of a substrate. A Bernoulli chucking pad suctions and holds a front surface or a back surface of a substrate S. A position determiner 54 is capable of pushing the substrate S in contact with a side surface 82 of the substrate S, and positioning the suctioned substrate S. A pin 66 enables the position determiner 54 to come in contact with the side surface 82 of the substrate S. The pin 66 brings the position determiner 54 into contact with the side surface 82 of the substrate S, and the position determiner 54 thereby positions the substrate S.
Electrochemical plating system and method of using
An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.
Electrochemical plating system and method of using
An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.
Plating system and method of plating wafer
A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.
Plating system and method of plating wafer
A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.
ELECTRODE AND APPARATUS FOR ELECTROLYTICALLY TREATING A WORKPIECE, ASSEMBLY FOR FORMING A CELL OF THE APPARATUS AND METHOD AND COMPUTER PROGRAM
An electrode for an apparatus (1) for electrolytically treating a workpiece (3), the apparatus (1) being of a type arranged to convey the workpiece (3) with a surface to be treated past and directed towards a surface of the electrode, is divided into segments (23a-e) at at least this surface of the electrode. The segments (23a-e) are arranged next to each other in a first direction (x). Adjacent segments (23a-e) are separated from each other along respective segment edges (24a-f) such as to allow adjacent segments (23a-e) to be maintained at different respective voltages. The segment edges (24a-f) extend at least partly in a second direction (y) from a common value (y.sub.0) of a co-ordinate in the second direction (y) to an edge (25,26) of at least an electrically conducting part of the electrode surface, the second direction (y) being transverse to the first direction (x) and corresponding to a direction of movement of the workpiece, in use. The segment edges (24a-f) between at least one pair of adjacent segments (23a-e) extend along respective paths of which an angle to the electrode surface edge (25,26) decreases from the common value (y.sub.0) of the co-ordinate to the electrode surface edge (25,26).
ELECTRODE AND APPARATUS FOR ELECTROLYTICALLY TREATING A WORKPIECE, ASSEMBLY FOR FORMING A CELL OF THE APPARATUS AND METHOD AND COMPUTER PROGRAM
An electrode for an apparatus (1) for electrolytically treating a workpiece (3), the apparatus (1) being of a type arranged to convey the workpiece (3) with a surface to be treated past and directed towards a surface of the electrode, is divided into segments (23a-e) at at least this surface of the electrode. The segments (23a-e) are arranged next to each other in a first direction (x). Adjacent segments (23a-e) are separated from each other along respective segment edges (24a-f) such as to allow adjacent segments (23a-e) to be maintained at different respective voltages. The segment edges (24a-f) extend at least partly in a second direction (y) from a common value (y.sub.0) of a co-ordinate in the second direction (y) to an edge (25,26) of at least an electrically conducting part of the electrode surface, the second direction (y) being transverse to the first direction (x) and corresponding to a direction of movement of the workpiece, in use. The segment edges (24a-f) between at least one pair of adjacent segments (23a-e) extend along respective paths of which an angle to the electrode surface edge (25,26) decreases from the common value (y.sub.0) of the co-ordinate to the electrode surface edge (25,26).
FILM FORMATION APPARATUS AND FILM FORMATION METHOD FOR FORMING METAL FILM
A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.
FILM FORMATION APPARATUS AND FILM FORMATION METHOD FOR FORMING METAL FILM
A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.
FILM FORMING APPARATUS FOR FORMING METAL FILM AND FILM FORMING METHOD FOR FORMING METAL FILM
Provided is a film forming apparatus and a film forming method capable of forming a homogenous metal film by suppressing accumulation of an electrolytic solution between a solid electrolyte membrane and a substrate. A film forming apparatus for forming a metal film includes an anode; a solid electrolyte membrane disposed between the anode and a substrate; a power supply that applies a current between the anode and the substrate; a mount base including a housing recess according to a shape of the substrate that is housed therein; and a housing including a storing chamber that stores an electrolytic solution together with the anode and having the solid electrolyte membrane attached thereto to seal the storing chamber. The mount base includes a liquid discharge portion that discharges the electrolytic solution having passed through the solid electrolyte membrane from a position facing an end face of a side wall of the housing.