An object is to reduce the field shielding effect of a paddle during plating. There is provided an apparatus for plating that is configured to plate a substrate and comprises a plating tank; an anode placed in the plating tank; a rotation mechanism configured to rotate the substrate in a first direction and in a second direction that is opposite to the first direction; and a control device configured to control the rotation mechanism, such that a time period when the substrate is rotated in the first direction becomes equal to a time period when the substrate is rotated in the second direction or such that a time integrated value of a rotation speed in the first direction becomes equal to a time integrated value of a rotation speed in the second direction.

A system is disclosed for controlling an electrochemical process. The system has a power source that is coupled to a power amplifier. The power amplifier is configured to provide an electromotive force (emf) signal, and a plurality of electrodes apply the emf signal to an electrochemical solution. A control element is configured to control the power amplifier such that the emf signal exhibits a predetermined frequency, amplitude, and duty cycle for reducing a thickness of the Nernst diffusion layer such that an operational parameter is set to a predetermined value.

A system is disclosed for controlling an electrochemical process. The system has a power source that is coupled to a power amplifier. The power amplifier is configured to provide an electromotive force (emf) signal, and a plurality of electrodes apply the emf signal to an electrochemical solution. A control element is configured to control the power amplifier such that the emf signal exhibits a predetermined frequency, amplitude, and duty cycle for reducing a thickness of the Nernst diffusion layer such that an operational parameter is set to a predetermined value.

An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

The invention relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a distribution method for a process fluid for chemical and/or electrolytic surface treatment of a substrate and a data processing device. The distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate comprises a distribution body and a shield element. The distribution body comprises a plurality of openings for the process fluid. The shield element is configured to at least partially cover at least one of the plurality of openings to limit a flow of the process fluid through the distribution body.

The invention relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a distribution method for a process fluid for chemical and/or electrolytic surface treatment of a substrate and a data processing device. The distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate comprises a distribution body and a shield element. The distribution body comprises a plurality of openings for the process fluid. The shield element is configured to at least partially cover at least one of the plurality of openings to limit a flow of the process fluid through the distribution body.

A structure includes a copper or copper alloy plating layer, in which Kirkendall void formation is suppressed. The copper or copper alloy plating layer is formed by electroplating at a prescribed first cathode current density by using a copper or copper alloy electroplating bath and then completing the electroplating after the first cathode current density is changed to a lower second cathode current density. The first cathode current density is a single cathode current density in the electroplating at this current density or an average cathode current density in the electroplating by combining plural cathode current densities. The first cathode current density is at lowest 5 A/dm.sup.2. A layer formed by changing the first cathode current density to the second cathode current density is a surface layer part of the copper or copper alloy plating layer, which can have a thickness of 0.05 μm to 15 μm.

A structure includes a copper or copper alloy plating layer, in which Kirkendall void formation is suppressed. The copper or copper alloy plating layer is formed by electroplating at a prescribed first cathode current density by using a copper or copper alloy electroplating bath and then completing the electroplating after the first cathode current density is changed to a lower second cathode current density. The first cathode current density is a single cathode current density in the electroplating at this current density or an average cathode current density in the electroplating by combining plural cathode current densities. The first cathode current density is at lowest 5 A/dm.sup.2. A layer formed by changing the first cathode current density to the second cathode current density is a surface layer part of the copper or copper alloy plating layer, which can have a thickness of 0.05 μm to 15 μm.