The present disclosure relates to a semiconductor apparatus and a potential measuring apparatus capable of preventing deterioration in signal characteristics due to parasitic capacitance caused by providing a configuration for realizing an electrode plating process when an electrode and an amplifier are provided on the same substrate. When a power source supplies a potential necessary for plating processing and a breaker reads a signal from liquid, and an amplifier amplifies and outputs the signal, the power source required for the plating processing is blocked with respect to the electrode. This is applicable to the potential measuring apparatus.

The invention relates to a method for a chemical and/or electrolytic surface treatment of a substrate in a process station and a process station for a chemical and/or electrolytic surface treatment of a substrate.

The method for a chemical and/or electrolytic surface treatment comprises the following steps, not necessarily in this order: mounting a substrate to be treated to a rotor unit, moving the rotor unit with the substrate into a pre-wetting chamber of the process station, applying a pre-wetting fluid to the substrate in the pre-wetting chamber, moving the rotor unit with the substrate at least partially out of the pre-wetting chamber, spinning the rotor unit with the substrate in a spinning plane to centrifugally reduce the pre-wetting fluid at a surface of the substrate, rotating the rotor unit with the substrate normal to the spinning plane so that the substrate faces away from the pre-wetting chamber, moving the rotor unit with the substrate into an electroplating chamber of the process station, applying an electrolyte liquid and an electric current to the substrate for an electroplating process on the substrate in the electroplating chamber, and moving the rotor unit with the substrate at least partially out of the electroplating chamber.

A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are arranged on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid holes have one end located between the plurality of anodes. A plurality of control devices is configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is arranged within a second predetermined gap of a work piece substrate including a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5:1 and 1.5:1. An array controller is configured to energize selected ones of the plurality of anodes using corresponding ones of the plurality of control devices while electrolyte solution is supplied through the first plurality of fluid holes between the anode substrate and the work piece substrate.

A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are arranged on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid holes have one end located between the plurality of anodes. A plurality of control devices is configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is arranged within a second predetermined gap of a work piece substrate including a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5:1 and 1.5:1. An array controller is configured to energize selected ones of the plurality of anodes using corresponding ones of the plurality of control devices while electrolyte solution is supplied through the first plurality of fluid holes between the anode substrate and the work piece substrate.

Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

An electrochemical-deposition apparatus includes an electrode array, a photoconductor, an electrically conductive layer, an electromagnetic-radiation emitter, an electric-power source, and a controller. The controller is configured to direct electric power to be supplied from the electric-power source to the electrically conductive layer and direct the electromagnetic-radiation emitter to generate electromagnetic radiation. When the electric power is supplied to the electrically conductive layer and when the electromagnetic radiation is generated, the photoconductor is illuminated at a first radiation level and a first level of electric current is enabled through the photoconductor and the at least one deposition electrode. When the electric power is supplied to the electrically conductive layer and when the electromagnetic radiation is generated, the photoconductor is illuminated at a second radiation level and a second level of electric current is enabled through the photoconductor and the at least one deposition electrode.

An electrochemical-deposition apparatus includes an electrode array, a photoconductor, an electrically conductive layer, an electromagnetic-radiation emitter, an electric-power source, and a controller. The controller is configured to direct electric power to be supplied from the electric-power source to the electrically conductive layer and direct the electromagnetic-radiation emitter to generate electromagnetic radiation. When the electric power is supplied to the electrically conductive layer and when the electromagnetic radiation is generated, the photoconductor is illuminated at a first radiation level and a first level of electric current is enabled through the photoconductor and the at least one deposition electrode. When the electric power is supplied to the electrically conductive layer and when the electromagnetic radiation is generated, the photoconductor is illuminated at a second radiation level and a second level of electric current is enabled through the photoconductor and the at least one deposition electrode.

The present inventin relates to a process for depositing a metal layer on a substrate by contacting the substrate with a metal plating bath comprising a metal ion source and a suppressor, and applying a current density to the substrate, where the suppressor is a polycarboxylate ether as described below. The invention further relates to a metal plating bath comprising a metal ion source and the suppressor which is a polycarboxylate ether; and to a use of the polycarboxylate ether in a metal plating bath for depositing a metal layer on a substrate.

The present inventin relates to a process for depositing a metal layer on a substrate by contacting the substrate with a metal plating bath comprising a metal ion source and a suppressor, and applying a current density to the substrate, where the suppressor is a polycarboxylate ether as described below. The invention further relates to a metal plating bath comprising a metal ion source and the suppressor which is a polycarboxylate ether; and to a use of the polycarboxylate ether in a metal plating bath for depositing a metal layer on a substrate.

A method of making an electrical component includes transmitting electrical energy from a power source through one or more deposition anodes, through an electrolyte solution, and to an intralayer electrical-connection feature of a build plate, such that material is electrochemically deposited onto the intralayer electrical-connection feature and forms an interlayer electrical-connection feature. The method also includes securing a dielectric material so that the dielectric material contacts and electrically insulates the intralayer electrical-connection feature and contacts and at least partially electrically insulates the interlayer electrical-connection feature. The method additionally includes depositing a seed layer onto the dielectric material and the interlayer electrical-connection feature, electrochemically depositing material onto the seed layer, to form at least one second intralayer electrical-connection feature of the electrical component, and removing any one or more portions of the seed layer onto which no portion of the at least one second intralayer electrical-connection feature is formed.